公开(公告)号：US20040203186A1

公开(公告)日：2004-10-14

申请号：US10686769

申请日：2003-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ci-moo Shong ,  Seok-jin Kang ,  Seok-whan Chung ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jong-seok Kim ,  Chan-bong Jun ,  Seog-woo Hong ,  Jung-ho Kang

IPC: H01L021/44

CPC classification number: B81B7/0006 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-mealing the deposited thin metal film. By the ion-mealing, the method is capable of connecting a metal wiring to a via hole having an undercut.

Abstract translation: 在MEMS封装工艺中用于底切的金属布线方法包括在硅衬底上设置MEMS元件，将玻璃晶片焊接到其上设置有MEMS元件的硅衬底的上部，所述玻璃晶片具有形成在其中的孔，用于 连接金属布线，在孔中沉积用于金属布线的金属薄膜，并使沉积的薄金属膜离子化。 通过离子加热，该方法能够将金属布线连接到具有底切的通孔。