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公开(公告)号:US20030183887A1
公开(公告)日:2003-10-02
申请号:US10384495
申请日:2003-03-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Eun-sung Lee , Chung-woo Kim , In-sang Song , Jong-seok Kim , Moon-chul Lee
IPC: H01L021/00 , H01L027/14 , H01L029/82
CPC classification number: B81B3/0078 , B81B2201/014 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81C2201/0107 , B81C2201/014 , H01H59/0009
Abstract: A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.
Abstract translation: 一种用于制造具有固定到基板上的固定部件,连接部件,驱动部件,驱动电极和接触部件的MEMS器件的方法,包括在所述基板上图形化所述驱动电极; 在所述基板上形成绝缘层; 图案化绝缘层并蚀刻绝缘层的固定区域和接触区域; 在衬底上形成金属层; 平坦化金属层直到绝缘层露出; 在所述基板上形成牺牲层; 图案化牺牲层以形成露出固定区域中绝缘层和金属层的一部分的开口; 在所述牺牲层上形成MEMS结构层以部分地填充所述开口,从而在其中形成侧壁; 并且通过蚀刻选择性地去除牺牲层的一部分,使得牺牲层的一部分保留在固定区域中。
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公开(公告)号:US20040203186A1
公开(公告)日:2004-10-14
申请号:US10686769
申请日:2003-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ci-moo Shong , Seok-jin Kang , Seok-whan Chung , Moon-chul Lee , Kyu-dong Jung , Jong-seok Kim , Chan-bong Jun , Seog-woo Hong , Jung-ho Kang
IPC: H01L021/44
CPC classification number: B81B7/0006 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , H01L2924/00
Abstract: A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-mealing the deposited thin metal film. By the ion-mealing, the method is capable of connecting a metal wiring to a via hole having an undercut.
Abstract translation: 在MEMS封装工艺中用于底切的金属布线方法包括在硅衬底上设置MEMS元件,将玻璃晶片焊接到其上设置有MEMS元件的硅衬底的上部,所述玻璃晶片具有形成在其中的孔,用于 连接金属布线,在孔中沉积用于金属布线的金属薄膜,并使沉积的薄金属膜离子化。 通过离子加热,该方法能够将金属布线连接到具有底切的通孔。
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公开(公告)号:US20040155306A1
公开(公告)日:2004-08-12
申请号:US10773312
申请日:2004-02-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eun-sung Lee , Chung-woo Kim , In-sang Song , Jong-seok Kim , Moon-chul Lee
IPC: H01L027/14
CPC classification number: B81B3/0078 , B81B2201/014 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81C2201/0107 , B81C2201/014 , H01H59/0009
Abstract: A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.
Abstract translation: 一种用于制造具有固定到基板上的固定部件,连接部件,驱动部件,驱动电极和接触部件的MEMS器件的方法,包括在所述基板上图形化所述驱动电极; 在所述基板上形成绝缘层; 图案化绝缘层并蚀刻绝缘层的固定区域和接触区域; 在衬底上形成金属层; 使金属层平坦化直到绝缘层露出; 在所述基板上形成牺牲层; 图案化牺牲层以形成露出固定区域中绝缘层和金属层的一部分的开口; 在所述牺牲层上形成MEMS结构层以部分地填充所述开口,从而在其中形成侧壁; 并且通过蚀刻选择性地去除牺牲层的一部分,使得牺牲层的一部分保留在固定区域中。
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