公开(公告)号：US20020158293A1

公开(公告)日：2002-10-31

申请号：US10121666

申请日：2002-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeung-leul Lee ,  Kyu-dong Jung ,  Sang-woo Lee ,  Yong-chul Cho

IPC: H01L027/14 ,  H01L029/82 ,  H01L029/84

CPC classification number: G01P15/18 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C2201/0132 ,  G01C19/5755 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0831

Abstract: Provided are a structure for detecting a vertical displacement and its manufacturing method. The structure for detecting a vertical displacement includes a body, an inertial mass floated over the body, a plurality of support beams extending from the inertial mass so as to suspend the inertial mass over the body, movable electrodes integrally formed with the inertial mass, and fixed electrodes floated over the body, each being positioned between the neighboring movable electrodes, wherein a vertical length of the movable electrode is different from a vertical length of the fixed electrode. Therefore, the structure and the electrodes can be simultaneously manufactured, thereby making the fabrication process simple. Also, it is possible to manufacture a three-axis accelerometer and a three-axis gyroscope on a single wafer by the same process, to be integrated as a six-axis inertial sensor.

Abstract translation: 提供了用于检测垂直位移的结构及其制造方法。 用于检测垂直位移的结构包括主体，悬挂在主体上的惯性质量，从惯性块延伸的多个支撑梁，以将惯性块悬挂在主体上，与惯性块一体形成的可动电极，以及 固定电极浮在身体上，每个固定电极位于相邻的可移动电极之间，其中可移动电极的垂直长度不同于固定电极的垂直长度。 因此，可以同时制造结构和电极，从而使制造工艺简单。 另外，可以通过相同的工艺在单个晶片上制造三轴加速度计和三轴陀螺仪，作为六轴惯性传感器集成。

公开(公告)号：US20040226369A1

公开(公告)日：2004-11-18

申请号：US10744099

申请日：2003-12-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-jin Kang ,  Seok-whan Chung ,  Moon-chul Lee ,  Kyu-dong Jung ,  Seog-soo Hong

IPC: G01P015/14

CPC classification number: G01C19/5762 ,  B81B3/0059 ,  B81B2201/0242 ,  B81B2203/051 ,  B81B2203/053

Abstract: A vertical MEMS gyroscope by horizontal driving includes a substrate, a support layer fixed on an upper surface of an area of the substrate, a driving structure floating above the substrate and having a portion fixed to the upper surface of the support layer and another portion in parallel with the fixed portion, the driving structure having a predetermined area capable of vibrating in a predetermined direction parallel to the substrate, a detection structure fixed to the driving structure on a same plane as the driving structure, and having a predetermined area capable of vibrating in a vertical direction with respect to the substrate, a cap wafer bonded with the substrate positioned above the driving structure and the detection structure, and a fixed vertical displacement detection electrode formed at a predetermined location of an underside of the cap wafer, for detecting displacement of the detection structure in the vertical direction.

Abstract translation: 通过水平驱动的垂直MEMS陀螺仪包括基板，固定在基板区域的上表面上的支撑层，浮动在基板上方的驱动结构，并且具有固定到支撑层的上表面的部分和 平行于固定部分，驱动结构具有能够在与基板平行的预定方向上振动的预定区域，与驱动结构固定在与驱动结构相同的平面上的检测结构，并且具有能够振动的预定区域 在相对于基板的垂直方向上，与位于驱动结构和检测结构上方的基板接合的盖晶片和形成在盖晶片的下侧的预定位置处的固定垂直位移检测电极，用于检测位移 的检测结构在垂直方向。

公开(公告)号：US20040203186A1

公开(公告)日：2004-10-14

申请号：US10686769

申请日：2003-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ci-moo Shong ,  Seok-jin Kang ,  Seok-whan Chung ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jong-seok Kim ,  Chan-bong Jun ,  Seog-woo Hong ,  Jung-ho Kang

IPC: H01L021/44

CPC classification number: B81B7/0006 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-mealing the deposited thin metal film. By the ion-mealing, the method is capable of connecting a metal wiring to a via hole having an undercut.

Abstract translation: 在MEMS封装工艺中用于底切的金属布线方法包括在硅衬底上设置MEMS元件，将玻璃晶片焊接到其上设置有MEMS元件的硅衬底的上部，所述玻璃晶片具有形成在其中的孔，用于 连接金属布线，在孔中沉积用于金属布线的金属薄膜，并使沉积的薄金属膜离子化。 通过离子加热，该方法能够将金属布线连接到具有底切的通孔。