公开(公告)号：US10014039B2

公开(公告)日：2018-07-03

申请号：US15333468

申请日：2016-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seon-Kyoo Lee ,  Jeong-Don Ihm ,  Byung-Hoon Jeong ,  Dae-Woon Kang

IPC: G11C7/10 ,  G11C7/14

CPC classification number: G11C7/14 ,  G11C7/1057 ,  G11C7/1084 ,  G11C29/021 ,  G11C29/028 ,  G11C29/4401

Abstract: A semiconductor device, includes at least a first memory chip, which includes at least a first buffer connected to receive an input signal and a reference voltage; at least a first reference voltage generator configured to output a reference voltage based on a first control code; and at least a first self-training circuit for determining an operational reference voltage to use during a normal mode of operation of the semiconductor device. An output from the first buffer is input to the first self-training circuit, the first control code is output from the first self-training circuit into the first reference voltage generator, and the first buffer, the first self-training circuit, and the first reference voltage generator form a loop.

公开(公告)号：USRE49206E1

公开(公告)日：2022-09-06

申请号：US16692483

申请日：2019-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-Woon Kang ,  Jeong-don Ihm ,  Byung-Hoon Jeong ,  Young-Don Choi

IPC: H03K19/0175 ,  G11C7/00 ,  H03H7/38 ,  G11C5/02 ,  G11C5/04 ,  G11C7/10 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C29/02 ,  H03K19/00 ,  G11C16/04 ,  G11C29/50

Abstract: A nonvolatile memory device includes a first memory structure. The first memory structure includes first through N-th memory dies that may be connected to an external memory controller via a first channel. N is a natural number equal to or greater than two. At least one of the first through N-th memory dies is configured to be used as a first representative die that performs an on-die termination (ODT) operation while a data write operation is performed for one of the first through N-th memory dies.