公开(公告)号：US09208079B2

公开(公告)日：2015-12-08

申请号：US14717476

申请日：2015-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon-Wook Oh ,  Do-Geun Kim ,  Chan-Ik Park

IPC: G06F12/02 ,  G11C11/56

CPC classification number: G06F3/0605 ,  G06F3/0604 ,  G06F3/0647 ,  G06F3/0649 ,  G06F3/0658 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F12/08 ,  G06F2003/0697 ,  G06F2212/7202 ,  G11C11/56 ,  G11C16/10

Abstract: In one aspect, data is stored in a solid state memory which includes first and second memory layers. A first assessment is executed to determine whether received data is hot data or cold data. Received data which is assessed as hot data during the first assessment is stored in the first memory layer, and received data which is first assessed as cold data during the first assessment is stored in the second memory layer. Further, a second assessment is executed to determine whether the data stored in the first memory layer is hot data or cold data. Data which is then assessed as cold data during the second assessment is migrated from the first memory layer to the second memory layer.

Abstract translation: 在一个方面，数据被存储在包括第一和第二存储器层的固态存储器中。 执行第一次评估以确定接收的数据是热数据还是冷数据。 在第一次评估期间被评估为热数据的接收数据被存储在第一存储器层中，并且在第一次评估期间首先被评估为冷数据的接收数据被存储在第二存储器层中。 此外，执行第二评估以确定存储在第一存储器层中的数据是热数据还是冷数据。 然后在第二次评估期间被评估为冷数据的数据从第一存储器层迁移到第二存储器层。

公开(公告)号：US09601218B2

公开(公告)日：2017-03-21

申请号：US14530951

申请日：2014-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bu-Il Jung ,  Ju-Yun Jung ,  Do-Geun Kim ,  Dong-Yang Lee ,  Min-Yeab Choo

IPC: G11C29/00 ,  G11C29/44 ,  G06F9/44 ,  G11C29/04

CPC classification number: G11C29/44 ,  G06F9/4401 ,  G11C2029/0407 ,  G11C2029/4402

Abstract: A memory system includes a read-only memory (ROM), a main memory and a processor. The ROM stores a basic input/output system (BIOS). The main memory includes a fail address table which stores at least one fail address designating a memory cell row having at least one defective cell. The processor receives fail information of the at least one fail address from the main memory and loads data associated with a booting operation of the memory system in a safe area of the main memory by avoiding a fail area corresponding to the at least one fail address during power-on operation while a power is applied to the memory system. The data associated with the booting operation is stored in a storage device.

公开(公告)号：US09472305B2

公开(公告)日：2016-10-18

申请号：US14534492

申请日：2014-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Yeab Choo ,  Bu-Il Jung ,  Do-Geun Kim ,  Mi-Kyoung Park ,  Dong-Yang Lee ,  Sun-Young Lim ,  Ju-Yun Jung ,  Hyuk Han

IPC: G11C29/04 ,  G11C29/00

CPC classification number: G11C29/04 ,  G11C29/78 ,  G11C29/785 ,  G11C29/88

Abstract: A method of repairing a memory device including a boot memory region, a normal memory region, and a redundant memory region, the redundant memory region including a plurality of repair memory units, includes repairing the boot memory region by performing at least one of excluding first fault memory units of the boot memory region from use as storage and replacing the first fault memory units with boot repair memory units of the repair memory units, each of the first fault memory units having at least one fault memory cell; and after the repairing the boot memory region, repairing the normal memory region by performing at least one of excluding second fault memory units from use as storage and replacing the second fault memory units with normal repair memory units of the repair memory units.

Abstract translation: 一种修复包括引导存储器区域，正常存储器区域和冗余存储器区域的存储器件的方法，所述冗余存储器区域包括多个修复存储器单元，包括通过执行以下操作中的至少一个修复引导存储器区域：排除第一 引导存储器区域的故障存储器单元用作存储，并且用修复存储器单元的引导修复存储器单元替换第一故障存储器单元，每个第一故障存储器单元具有至少一个故障存储器单元; 并且在修复引导存储器区域之后，通过执行排除第二故障存储器单元中的至少一个作为存储来修复正常存储器区域，并用修复存储器单元的正常修复存储器单元替换第二故障存储器单元。