公开(公告)号：US10714685B2

公开(公告)日：2020-07-14

申请号：US16529017

申请日：2019-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kyu Yang ,  Seong Geon Park ,  Dong Jun Seong ,  Dong Ho Ahn ,  Jung Moo Lee ,  Seol Choi ,  Hideki Horii

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

公开(公告)号：US10403818B2

公开(公告)日：2019-09-03

申请号：US15401474

申请日：2017-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kyu Yang ,  Seong Geon Park ,  Dong Jun Seong ,  Dong Ho Ahn ,  Jung Moo Lee ,  Seol Choi ,  Hideki Horii

IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

公开(公告)号：US10128312B2

公开(公告)日：2018-11-13

申请号：US15485594

申请日：2017-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Zhe Wu ,  Jeong Hee Park ,  Dong Ho Ahn ,  Jin Woo Lee ,  Hee Ju Shin ,  Ja Bin Lee

IPC: H01L27/24 ,  H01L23/528 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L45/00

Abstract: There is provided a non-volatile memory device which can enhance the reliability of a memory device by using an ovonic threshold switch (OTS) selection element including a multilayer structure. The non-volatile memory device includes a first electrode and a second electrode spaced apart from each other, a selection element layer between the first electrode and the second electrode, which is closer to the second electrode rather than to the first electrode, and which includes a first chalcogenide layer, a second chalcogenide layer, and a material layer disposed between the first and second chalcogenide layers. The first chalcogenide layer including a first chalcogenide material, and the second chalcogenide layer including a second chalcogenide material. A memory layer between the first electrode and the selection element layer includes a third chalcogenide material which is different from the first and second chalcogenide materials.