公开(公告)号：US20140374827A1

公开(公告)日：2014-12-25

申请号：US14259212

申请日：2014-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Chan SUH ,  Chung-Geun KOH ,  Seong-Hoon JEONG ,  Kwan-Heum LEE ,  Hwa-Sung RHEE ,  Gyeom KIM

IPC: H01L29/78 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L29/66545

Abstract: A semiconductor device includes a fin type active pattern protruding above a device isolation layer, a gate electrode on the device isolation layer and intersecting the fin type active pattern, an elevated source/drain on the fin type active pattern at both sides of the gate electrode, and a fin spacer on a side wall of the fin type active pattern, the fin spacer having a low dielectric constant and being between the device isolation layer and the elevated source/drain.

Abstract translation: 半导体器件包括突出在器件隔离层上方的翅片型有源图案，器件隔离层上的栅电极并与鳍式有源图案相交，栅极电极两侧的翅片型有源图案上的升高的源极/漏极 以及在翅片型有源图案的侧壁上的翅片间隔件，翅片间隔件具有低介电常数并且位于器件隔离层和升高的源极/漏极之间。

公开(公告)号：US20160293750A1

公开(公告)日：2016-10-06

申请号：US15049859

申请日：2016-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Bum KIM ,  Nam Kyu KIM ,  Hyun-Ho NOH ,  Dong-Chan SUH ,  Byeong-Chan LEE ,  Su-Jin JUNG ,  Jin-Yeong JOE ,  Bon-Young KOO

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/16

CPC classification number: H01L29/785 ,  H01L29/0649 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7848 ,  H01L29/7856

Abstract: A semiconductor device includes an active fin structure extending in a first direction, the active fin structure including protruding portions divided by a recess, a plurality of gate structures extending in a second direction crossing the first direction and covering the protruding portions of the active fin structure, a first epitaxial pattern in a lower portion of the recess between the gate structures, a second epitaxial pattern on a portion of the first epitaxial pattern, the second epitaxial pattern contacting a sidewall of the recess, and a third epitaxial pattern on the first and second epitaxial patterns, the third epitaxial pattern filling the recess. The first epitaxial pattern includes a first impurity region having a first doping concentration, the second epitaxial pattern includes a second impurity region having a second doping concentration lower than the a first doping concentration, and the third epitaxial pattern includes a third impurity region having a third doping concentration higher than the second doping concentration. The semiconductor device may have good electrical characteristics.

Abstract translation: 半导体器件包括沿第一方向延伸的有源鳍结构，所述有源鳍结构包括由凹部分隔的突出部分，沿与第一方向交叉的第二方向延伸并覆盖有源鳍结构的突出部分的多个栅极结构 ，在栅极结构之间的凹部的下部中的第一外延图案，在第一外延图案的一部分上的第二外延图案，第二外延图案接触凹槽的侧壁，以及在第一外延图案的第一和第二外延图案 第二外延图案，填充凹槽的第三外延图案。 第一外延图案包括具有第一掺杂浓度的第一杂质区，第二外延图案包括具有低于第一掺杂浓度的第二掺杂浓度的第二杂质区，并且第三外延图包括具有第三掺杂浓度的第三杂质区 掺杂浓度高于第二掺杂浓度。 半导体器件可具有良好的电特性。