公开(公告)号：US20170062435A1

公开(公告)日：2017-03-02

申请号：US15162912

申请日：2016-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyun IM ,  Han-Jin LIM ,  Jin-Won MA ,  Kong-Soo LEE ,  Ki-Vin IM

IPC: H01L27/108 ,  H01L29/06 ,  H01L23/532 ,  H01L23/522 ,  H01L23/535 ,  H01L23/528

CPC classification number: H01L27/10814 ,  B82Y10/00 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/53271 ,  H01L23/535 ,  H01L27/10823 ,  H01L27/10852 ,  H01L28/90 ,  H01L29/0676 ,  H01L29/66439 ,  H01L29/775

Abstract: Semiconductor devices and fabricating methods thereof are provided. A semiconductor device may include a substrate, a metal layer on the substrate, a seed layer on the metal layer, a nanowire including a pillar shape on the seed layer, a dielectric film conformally covering the nanowire, and an electrode film on the dielectric film.

Abstract translation: 提供半导体器件及其制造方法。 半导体装置可以包括基板，基板上的金属层，金属层上的种子层，种子层上的柱状的纳米线，保形地覆盖纳米线的电介质膜，以及电介质膜上的电极膜 。

公开(公告)号：US20220165608A1

公开(公告)日：2022-05-26

申请号：US17574665

申请日：2022-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hyun IM ,  Kibum LEE ,  Daehyun KIM ,  Ju Hyung WE ,  Sungmi YOON

IPC: H01L21/762 ,  H01L21/763 ,  H01L21/02 ,  H01L27/108 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/146 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a semiconductor substrate that includes a trench defining an active region; a buried dielectric pattern in the trench; a silicon oxide layer between the buried dielectric pattern and an inner wall of the trench; and a polycrystalline silicon layer between the silicon oxide layer and the inner wall of the trench, wherein the polycrystalline silicon layer has a first surface in contact with the semiconductor substrate and a second surface in contact with the silicon oxide layer, and wherein the second surface includes a plurality of silicon grains that are uniformly distributed.

公开(公告)号：US20200119021A1

公开(公告)日：2020-04-16

申请号：US16711833

申请日：2019-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwon MA ,  Jun-Noh Lee ,  Dong-Hyun IM ,  Youngseok Kim ,  Kongsoo Lee

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/485

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.