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公开(公告)号：US09293854B2
公开(公告)日：2016-03-22
申请号：US13873746
申请日：2013-04-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： JinTae Kang , Kisun Kim , Dongyang Lee , Doil Kong , Sunghoon Lee
CPC classification number: H01R13/44 , G06F1/16 , G06F1/185 , G06K19/07732 , G06K19/07743 , G11C5/05 , G11C16/06 , H01L2224/48091 , H01L2224/48227 , H01L2924/15174 , H01L2924/00014
Abstract: Provided is a memory card. The memory card includes interconnection terminals for electric connection with an external electronic machine. The interconnection terminals may be spaced from the front side of the memory card by a distance greater than the lengths of the interconnection terminals. Alternatively, the memory card may include other interconnection terminals between its front side and the former interconnection terminals. The former and latter interconnection terminals may be used for electric connection with different kinds of electronic machines.
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2.发明授权Multi channel semiconductor memory device and semiconductor device including the same 有权多通道半导体存储器件和包括其的半导体器件公开(公告)号：US09251863B2
公开(公告)日：2016-02-02
申请号：US14268675
申请日：2014-05-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun-Joong Kim , Dongyang Lee
IPC: G11C7/00 , G11C5/06 , H01L25/065
CPC classification number: G11C5/063 , H01L25/0657 , H01L2225/06541 , H01L2225/06565 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed is a semiconductor memory device that includes a plurality of channel memories mounted within a package and is capable of minimizing or reducing the number of through-silicon vias. With the semiconductor memory device, a row command or a row address on two or more channels is applied through a shared bus. The semiconductor memory device is capable of reducing an overhead of a die size by reducing the number of through-silicon vias. A method of driving a multi-channel semiconductor memory device including a plurality of memories, using a shared bus, is also provided.
Abstract translation: 公开了一种半导体存储器件，其包括安装在封装内的多个通道存储器，并且能够最小化或减少硅通孔的数量。 利用半导体存储器件，通过共享总线施加两个或更多个通道上的行命令或行地址。 半导体存储器件能够通过减少硅通孔的数量来减少管芯尺寸的开销。 还提供了使用共享总线驱动包括多个存储器的多通道半导体存储器件的方法。
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3.发明申请MULTI CHANNEL SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 有权多通道半导体存储器件和包括其的半导体器件公开(公告)号：US20140241024A1
公开(公告)日：2014-08-28
申请号：US14268675
申请日：2014-05-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun-Joong Kim , Dongyang Lee
IPC: G11C5/06
CPC classification number: G11C5/063 , H01L25/0657 , H01L2225/06541 , H01L2225/06565 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed is a semiconductor memory device that includes a plurality of channel memories mounted within a package and is capable of minimizing or reducing the number of through-silicon vias. With the semiconductor memory device, a row command or a row address on two or more channels is applied through a shared bus. The semiconductor memory device is capable of reducing an overhead of a die size by reducing the number of through-silicon vias. A method of driving a multi-channel semiconductor memory device including a plurality of memories, using a shared bus, is also provided.
Abstract translation: 公开了一种半导体存储器件，其包括安装在封装内的多个通道存储器，并且能够最小化或减少硅通孔的数量。 利用半导体存储器件，通过共享总线施加两个或更多个通道上的行命令或行地址。 半导体存储器件能够通过减少硅通孔的数量来减少管芯尺寸的开销。 还提供了使用共享总线驱动包括多个存储器的多通道半导体存储器件的方法。
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