公开(公告)号：US20240071771A1

公开(公告)日：2024-02-29

申请号：US18355520

申请日：2023-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngwoo KIM ,  Yonghan PARK ,  Jiho PARK ,  Geumjung SEONG ,  Seunguk HAN

IPC: H01L21/311 ,  H01L21/308

CPC classification number: H01L21/31144 ,  H01L21/3086

Abstract: A method of manufacturing an integrated circuit device includes preparing a semiconductor substrate having an active area and a field area, sequentially forming a lower insulation layer, a buried layer, a first sacrificial layer, a second sacrificial layer, and a third sacrificial layer on the semiconductor substrate, removing a portion of the third sacrificial layer to form a first sacrificial pattern, removing a portion of the second sacrificial layer and the first sacrificial pattern to form a second sacrificial pattern, removing a portion of the first sacrificial layer and the second sacrificial pattern to form a third sacrificial pattern, removing a portion of the buried layer and the third sacrificial pattern to form a buried pattern, and removing a portion of the lower insulation layer and a portion of the semiconductor substrate by using the buried pattern as an etch mask to form a word line trench.

公开(公告)号：US20220028868A1

公开(公告)日：2022-01-27

申请号：US17192069

申请日：2021-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyewon KIM ,  Eunjung KIM ,  Geumjung SEONG ,  Jay-Bok CHOI

IPC: H01L27/108 ,  H01L21/762

Abstract: A semiconductor device includes a substrate including a cell region, a peripheral region, and a boundary region therebetween, a cell device isolation pattern on the cell region of the substrate to define cell active patterns, a peripheral device isolation pattern on the peripheral region of the substrate to define peripheral active patterns, and an insulating isolation pattern on the boundary region of the substrate, the insulating isolation pattern being between the cell active patterns and the peripheral active patterns, wherein a bottom surface of the insulating isolation pattern includes a first edge adjacent to a side surface of a corresponding one of the cell active patterns, and a second edge adjacent to a side surface of a corresponding one of the peripheral active patterns, the first edge being at a height lower than the second edge, when measured from a bottom surface of the substrate.