公开(公告)号：US09899272B2

公开(公告)日：2018-02-20

申请号：US15234170

申请日：2016-08-11

申请人： Samsung Electronics Co., Ltd.

发明人： Poren Tang ,  Sunjung Steve Kim ,  Moon Seung Yang ,  Seung Hun Lee ,  Hyun Jung Lee ,  Geun Hee Jeong

IPC分类号： H01L21/8238 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/10 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8258

CPC分类号： H01L21/823892 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/308 ,  H01L21/823807 ,  H01L21/8258 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/1054 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/78

摘要： Methods of fabricating semiconductor device are provided including forming first and second material layers for a first transistor using epitaxial growth processes. A recess region is formed by partially etching the first and second material layers. Third and fourth material layers for a second transistor are formed using epitaxial growth processes.