FUSION MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20220384410A1

    公开(公告)日:2022-12-01

    申请号:US17883682

    申请日:2022-08-09

    Abstract: Disclosed are fusion memory devices and methods of fabricating the same. The fusion memory device comprises a first memory device including a first substrate having active and inactive surfaces opposite to each other and a first memory cell circuit on the active surface of the first substrate, a non-memory device including a second substrate having active and inactive surfaces opposite to each other and a non-memory circuit on the active surface of the second substrate, the non-memory device being provided on the first memory device, and a second memory device on the inactive surface of the second substrate and including a second memory cell circuit different from the first memory cell circuit. The non-memory device lies between the first and second memory cell circuits and controls an electrical operation of each of the first and second memory cell circuits.

    RAID STORAGE DEVICE AND METHOD OF MANAGEMENT THEREOF

    公开(公告)号:US20170322847A1

    公开(公告)日:2017-11-09

    申请号:US15435401

    申请日:2017-02-17

    Inventor: HYUNSIK PARK

    CPC classification number: G06F11/1092 G06F11/2058

    Abstract: A method of managing a plurality of storage devices controlled in a RAID scheme includes detecting a failure disk among the storage devices, selecting one of a plurality of stripes of the storage devices according to a result of the detection, identifying a valid page of data included in a normal chunk of the selected stripe and a valid page of data of a lost chunk mapped to the failure disk with reference to address mapping information, recovering the valid page of the lost chunk among chunks included in the selected stripe with reference to information on the identified valid page, and copying the recovered valid page of the lost chunk and the valid page of the normal chunk to a new stripe of the storage devices.

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