公开(公告)号：US20160027707A1

公开(公告)日：2016-01-28

申请号：US14794813

申请日：2015-07-09

申请人： Samsung Electronics Co., Ltd.

发明人： Sung Yoon RYU ,  WOOSEOK KO ,  Souk KIM ,  Yusin YANG ,  SANGKIL LEE ,  CHUNGSAM JUN ,  Kwanwoo RYU

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  H01L21/67173 ,  H01L22/20

摘要： A method includes loading a substrate into a sensing chamber; while the substrate is in the sensing chamber, performing a spectral analysis of the substrate; transferring the substrate between the sensing chamber and a processing chamber coupled to the sensing chamber; processing the substrate in the processing chamber to form at least a first layer and/or pattern on the substrate; and based on at least the spectral analysis, determining whether a parameter resulting from the formation of first layer and/or pattern is satisfied.

摘要翻译： 一种方法包括将衬底加载到感测室中; 同时衬底在感测室中，对衬底进行光谱分析; 在所述感测室和耦合到所述感测室的处理室之间传送所述衬底; 在所述处理室中处理所述衬底以在所述衬底上形成至少第一层和/或图案; 并且至少基于光谱分析，确定是否满足形成第一层和/或图案所引起的参数。

公开(公告)号：US20230152985A1

公开(公告)日：2023-05-18

申请号：US18054196

申请日：2022-11-10

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： SANGKIL LEE ,  HOJIN CHUN ,  CHANKYUNG KIM ,  YONGJAE LEE ,  GEUNHEE CHO

IPC分类号： G06F3/06

CPC分类号： G06F3/0619 ,  G06F3/0659 ,  G06F3/0673

摘要： A memory system includes a first non-volatile memory device, a second non-volatile memory device, at least one volatile memory device configured to store user data or a map table, and a memory controller configured to data-dump the user data from the at least one volatile memory device to the first non-volatile memory device when a sudden power-off occurs. The first non-volatile memory device has a faster speed at which data is written than the second non-volatile memory device and has a smaller capacity than the second non-volatile memory device.

公开(公告)号：US20220384410A1

公开(公告)日：2022-12-01

申请号：US17883682

申请日：2022-08-09

申请人： Samsung Electronics Co., Ltd.

发明人： HYUNMOG PARK ,  DAEHYUN KIM ,  JINMIN KIM ,  HEI SEUNG KIM ,  HYUNSIK PARK ,  SANGKIL LEE

IPC分类号： H01L25/18 ,  G11C14/00 ,  G11C16/04 ,  H01L25/00 ,  H01L27/11556 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/48

摘要： Disclosed are fusion memory devices and methods of fabricating the same. The fusion memory device comprises a first memory device including a first substrate having active and inactive surfaces opposite to each other and a first memory cell circuit on the active surface of the first substrate, a non-memory device including a second substrate having active and inactive surfaces opposite to each other and a non-memory circuit on the active surface of the second substrate, the non-memory device being provided on the first memory device, and a second memory device on the inactive surface of the second substrate and including a second memory cell circuit different from the first memory cell circuit. The non-memory device lies between the first and second memory cell circuits and controls an electrical operation of each of the first and second memory cell circuits.