公开(公告)号：US20220384410A1

公开(公告)日：2022-12-01

申请号：US17883682

申请日：2022-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYUNMOG PARK ,  DAEHYUN KIM ,  JINMIN KIM ,  HEI SEUNG KIM ,  HYUNSIK PARK ,  SANGKIL LEE

IPC: H01L25/18 ,  G11C14/00 ,  G11C16/04 ,  H01L25/00 ,  H01L27/11556 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/48

Abstract: Disclosed are fusion memory devices and methods of fabricating the same. The fusion memory device comprises a first memory device including a first substrate having active and inactive surfaces opposite to each other and a first memory cell circuit on the active surface of the first substrate, a non-memory device including a second substrate having active and inactive surfaces opposite to each other and a non-memory circuit on the active surface of the second substrate, the non-memory device being provided on the first memory device, and a second memory device on the inactive surface of the second substrate and including a second memory cell circuit different from the first memory cell circuit. The non-memory device lies between the first and second memory cell circuits and controls an electrical operation of each of the first and second memory cell circuits.