公开(公告)号：US12207471B2

公开(公告)日：2025-01-21

申请号：US17459887

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hae-Min Lee ,  Kwang-Soo Kim ,  Sun-Il Shim

IPC: H10B43/35 ,  G11C5/06 ,  H01L23/522 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27

Abstract: A semiconductor memory device includes gate electrodes arranged on a substrate to be spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, an upper insulation layer arranged on an uppermost gate electrode, channel structures penetrating through the upper insulation layer, and the gate electrodes in the first direction, and string selection line cut insulation layers horizontally separating the upper insulation layer and the uppermost gate electrode. Each of the string selection line cut insulation layers includes a protrusion protruding toward the uppermost gate electrode and positioning on the same level as the first gate electrode.

公开(公告)号：US10756108B2

公开(公告)日：2020-08-25

申请号：US16266127

申请日：2019-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hae-Min Lee

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/311 ,  H01L23/535 ,  H01L27/11573

Abstract: A vertical memory device includes a substrate including a first region including a cell array formed thereon and a second region surrounding the first region, the second region including a stair structure formed thereon, gate electrodes stacked on the substrate to be spaced apart from each other in a first direction vertical to an upper surface of the substrate, each of the gate electrodes extending in a second direction parallel to the upper surface of the substrate and including a pad at an end portion thereof in the second direction, a channel extending through the gate electrodes in the first direction on the first region of the substrate, and contact plugs formed on the second region, the contact plugs extending in the first direction to contact the pads of the gate electrodes respectively. A first pad of the pads, in a plan view, may have a convex edge portion that is convex in a direction away from the first region of the substrate, and a second pad disposed on the first pad, in a plan view, may have a concave edge portion that is concave in a direction toward the first region of the substrate.