公开(公告)号：US11804367B2

公开(公告)日：2023-10-31

申请号：US17221891

申请日：2021-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok Hwan Bae ,  Dong Hoon Kim ,  Byeong Sang Kim ,  Hak Young Kim ,  Hee Won Min

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32633 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/68735 ,  H01J2237/0206 ,  H01J2237/2007 ,  H01J2237/334

Abstract: Provided is plasma processing equipment comprising a substrate support, a focus ring disposed along an edge of the upper surface of the substrate support and including a fluid hole passing through a main body, an insulating ring surrounding an outer sidewall of the substrate support and including an inner side surface facing the outer sidewall of the substrate support, an outer side surface, and an upper surface connecting the inner and outer side surfaces, and including upper and lower end portions having different heights, and a connection end portion connecting the upper and lower end portions, a liner surrounding the outer side surface of the insulating ring and a baffle disposed on an upper surface of the liner, wherein a fluid passing through the fluid hole flows along the upper surface, and the baffle generates a pressure difference of the fluid between the upper and lower end portions.