公开(公告)号：US20160126096A1

公开(公告)日：2016-05-05

申请号：US14994120

申请日：2016-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho KANG ,  Bong-Jin KUH ,  Yong-Kyu JOO ,  Sung-Ho HEO ,  Hee-Seok KIM ,  Yong-Sung PARK

IPC: H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。

公开(公告)号：US20140193967A1

公开(公告)日：2014-07-10

申请号：US14152191

申请日：2014-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho KANG ,  Bong-Jin KUH ,  Yong-Kyu JOO ,  Sung-Ho HEO ,  Hee-Seok KIM ,  Yong-Sung PARK

IPC: H01L21/02

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。

公开(公告)号：US20130269876A1

公开(公告)日：2013-10-17

申请号：US13795474

申请日：2013-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ik-Soo KIM ,  Ho-Gon KIM ,  Yong-Taek HONG ,  Kyoung-Hwan KIM ,  Hee-Seok KIM ,  Sung-Ho HAN

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/3065 ,  C23C16/4412 ,  H01L21/02104 ,  H01L21/67017

Abstract: An apparatus for fabricating a semiconductor device includes a chamber, a processing part inside the chamber, a gas injection pipe connected to the chamber, a gas pumping pipe connected to the chamber, and a baffle assembly embedded in a chamber wall, and the baffle assembly includes a baffle plate having baffle holes, and a baffle guide surrounding an outer surface of the baffle plate.

Abstract translation: 一种用于制造半导体器件的装置，包括：腔室，腔室内的处理部分，连接到腔室的气体注入管，连接到腔室的气体抽吸管，以及嵌入在腔室壁中的挡板组件，以及挡板组件 包括具有挡板孔的挡板和围绕挡板的外表面的挡板导向件。