公开(公告)号：US20220102427A1

公开(公告)日：2022-03-31

申请号：US17230029

申请日：2021-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hoon KIM ,  Sang Hwan PARK ,  Yong-Sung PARK ,  Hyeonwoo SEO ,  Se Chung OH ,  Hyun CHO

IPC: H01L27/22 ,  H01L27/24

Abstract: A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.

公开(公告)号：US20200136020A1

公开(公告)日：2020-04-30

申请号：US16727986

申请日：2019-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Sung PARK ,  Woo-Jin KIM ,  Jeong-Heon PARK ,  Se-Chung OH ,  Joon-Myoung LEE ,  Hyun CHO

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: The methods of manufacturing an MRAM device and MRAM devices are provided. The methods may include forming a first electrode on an upper surface of a substrate, forming a first magnetic layer on the first electrode, forming a tunnel barrier structure on the first magnetic layer, forming a second magnetic layer on the tunnel barrier structure, and forming a second electrode on the second magnetic layer. The tunnel barrier structure may include a first tunnel barrier layer and a second tunnel barrier layer that are sequentially stacked on the first magnetic layer and may have different resistivity distributions from each other along a horizontal direction that may be parallel to the upper surface of the substrate.

公开(公告)号：US20160126096A1

公开(公告)日：2016-05-05

申请号：US14994120

申请日：2016-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho KANG ,  Bong-Jin KUH ,  Yong-Kyu JOO ,  Sung-Ho HEO ,  Hee-Seok KIM ,  Yong-Sung PARK

IPC: H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。

公开(公告)号：US20200255934A1

公开(公告)日：2020-08-13

申请号：US16862791

申请日：2020-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Myoung LEE ,  Yong-Sung PARK ,  Whan-Kyun KIM ,  Se-Chung OH ,  Young-Man JANG

IPC: C23C14/34 ,  H01J37/32 ,  C23C16/455

Abstract: A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

公开(公告)号：US20190123263A1

公开(公告)日：2019-04-25

申请号：US16108192

申请日：2018-08-22

Applicant: Samsung Electronics Co, Ltd.

Inventor： Yong-Sung PARK ,  Woo-Jin Kim ,  Jeong-Heon Park ,  Se-Chung Oh ,  Joon-Myoung Lee ,  Hyun Cho

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22

Abstract: The methods of manufacturing an MRAM device and MRAM devices are provided. The methods may include forming a first electrode on an upper surface of a substrate, forming a first magnetic layer on the first electrode, forming a tunnel barrier structure on the first magnetic layer, forming a second magnetic layer on the tunnel barrier structure, and forming a second electrode on the second magnetic layer. The tunnel barrier structure may include a first tunnel barrier layer and a second tunnel barrier layer that are sequentially stacked on the first magnetic layer and may have different resistivity distributions from each other along a horizontal direction that may be parallel to the upper surface of the substrate.

公开(公告)号：US20140193967A1

公开(公告)日：2014-07-10

申请号：US14152191

申请日：2014-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho KANG ,  Bong-Jin KUH ,  Yong-Kyu JOO ,  Sung-Ho HEO ,  Hee-Seok KIM ,  Yong-Sung PARK

IPC: H01L21/02

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。