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    CMOS IMAGE SENSOR BASED ON THIN-FILM ON ASIC AND OPERATING METHOD THEREOF
    1.
    发明申请
    CMOS IMAGE SENSOR BASED ON THIN-FILM ON ASIC AND OPERATING METHOD THEREOF 有权
    基于ASIC的CMOS图像传感器及其操作方法

    公开(公告)号：US20150189200A1

    公开(公告)日：2015-07-02

    申请号：US14584273

    申请日：2014-12-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-Gu JIN ,  Dong-Ki MIN ,  Hirosige GOTO ,  Tae-Chan KIM

    IPC: H04N5/359 ,  H01L27/146 ,  H04N13/02 ,  H04N5/374 ,  H04N9/04

    CPC classification number: H01L27/14627 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14665 ,  H04N5/3696 ,  H04N5/3745 ,  H04N9/045 ,  H04N13/207

    Abstract: Provided are a complementary metal-oxide semiconductor (CMOS) image sensor based on a thin-film-on-application specific integrated circuit (TFA), and a method of operating the same. The CMOS image sensor may include at least one floating diffusion region formed in a semiconductor substrate, and a thin film type light sensor disposed to correspond to a plurality of pixels. The CMOS image sensor may also include at least one via electrically connected between the light sensor and the at least one floating diffusion region. The CMOS image sensor may also include a first micro lens disposed to correspond to at least two pixels of the plurality of pixels.

    Abstract translation: 提供了一种基于薄膜专用集成电路（TFA）的互补金属氧化物半导体（CMOS）图像传感器及其操作方法。 CMOS图像传感器可以包括形成在半导体衬底中的至少一个浮动扩散区域和与多个像素相对应地设置的薄膜型光传感器。 CMOS图像传感器还可以包括电连接在光传感器和至少一个浮动扩散区域之间的至少一个通孔。 CMOS图像传感器还可以包括设置成对应于多个像素中的至少两个像素的第一微透镜。

    IMAGE SENSOR, CONFIGURED TO REGULATE A QUANTITY OF LIGHT ABSORBED THEREBY, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD
    2.
    发明申请
    IMAGE SENSOR, CONFIGURED TO REGULATE A QUANTITY OF LIGHT ABSORBED THEREBY, ELECTRONIC DEVICE INCLUDING THE SAME, AND IMAGE SENSING METHOD 审中-公开
    图像传感器，被配置为调节其吸收的光的数量，包括其的电子设备和图像感测方法

    公开(公告)号：US20150156437A1

    公开(公告)日：2015-06-04

    申请号：US14579857

    申请日：2014-12-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang Chul SUL ,  Hirosige GOTO ,  Kyung Ho LEE

    IPC: H04N5/3745 ,  H04N5/378

    CPC classification number: H04N5/3745 ,  H01L27/307 ,  H04N5/3591 ,  H04N5/378

    Abstract: An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.

    Abstract translation: 提供了图像传感器和图像感测方法。 图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。 由有机光电转换层接收的光量由偏置单元的偏置变化来调节。

    IMAGE SENSOR INCLUDING SOURCE FOLLOWER
    3.
    发明申请
    IMAGE SENSOR INCLUDING SOURCE FOLLOWER 有权
    图像传感器，包括源头

    公开(公告)号：US20150048426A1

    公开(公告)日：2015-02-19

    申请号：US14459385

    申请日：2014-08-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hirosige GOTO

    IPC: H01L27/148 ,  H04N5/369 ,  H01L27/146

    CPC classification number: H01L27/14616 ,  H01L27/14612 ,  H01L27/1463 ,  H04N5/3698

    Abstract: Provided is an image sensor including a source follower transistor. The source follower transistor may include a channel structure that is provided between a source and a drain, and includes a first semiconductor layer, a second semiconductor layer, and a blocking structure. The first semiconductor layer may be spaced apart from a gate insulating layer of the source follower transistor by a first depth or more. Carriers may move from the source of the source follower transistor to the drain thereof through the first semiconductor layer.

    Abstract translation: 提供了一种包括源极跟随器晶体管的图像传感器。 源极跟随器晶体管可以包括设置在源极和漏极之间的沟道结构，并且包括第一半导体层，第二半导体层和阻挡结构。 第一半导体层可以与源极跟随器晶体管的栅极绝缘层间隔第一深度或更多。 载体可以从源极跟随器晶体管的源极移动到其漏极穿过第一半导体层。

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