公开(公告)号：US20130229491A1

公开(公告)日：2013-09-05

申请号：US13743595

申请日：2013-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wang-Hyun KIM ,  Dong-Ki MIN ,  Young-Gu JIN ,  Ilia OVSIANNIKOV

IPC: G06F3/01

CPC classification number: G06F3/017 ,  G06F1/3262 ,  G06F1/3265 ,  G06F3/0304 ,  Y02D10/153 ,  Y02D50/20

Abstract: In a method of operating a three-dimensional image sensor including a light source module according to example embodiments, the three-dimensional image sensor detects a position change of an object by generating a two-dimensional image in a low power standby mode. The three-dimensional image sensor switches a mode from the low power standby mode to a three-dimensional operating mode when the position change of the object is detected in the two-dimensional image. The three-dimensional image sensor performs gesture recognition for the object by generating a three-dimensional image using the light source module in the three-dimensional operating mode.

Abstract translation: 在根据示例性实施例的操作包括光源模块的三维图像传感器的方法中，三维图像传感器通过在低功率待机模式中生成二维图像来检测对象的位置变化。 当在二维图像中检测到物体的位置变化时，三维图像传感器将模式从低功率待机模式切换到三维操作模式。 三维图像传感器通过使用三维操作模式中的光源模块生成三维图像来对对象执行手势识别。

公开(公告)号：US20150189200A1

公开(公告)日：2015-07-02

申请号：US14584273

申请日：2014-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Gu JIN ,  Dong-Ki MIN ,  Hirosige GOTO ,  Tae-Chan KIM

IPC: H04N5/359 ,  H01L27/146 ,  H04N13/02 ,  H04N5/374 ,  H04N9/04

CPC classification number: H01L27/14627 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14665 ,  H04N5/3696 ,  H04N5/3745 ,  H04N9/045 ,  H04N13/207

Abstract: Provided are a complementary metal-oxide semiconductor (CMOS) image sensor based on a thin-film-on-application specific integrated circuit (TFA), and a method of operating the same. The CMOS image sensor may include at least one floating diffusion region formed in a semiconductor substrate, and a thin film type light sensor disposed to correspond to a plurality of pixels. The CMOS image sensor may also include at least one via electrically connected between the light sensor and the at least one floating diffusion region. The CMOS image sensor may also include a first micro lens disposed to correspond to at least two pixels of the plurality of pixels.

Abstract translation: 提供了一种基于薄膜专用集成电路（TFA）的互补金属氧化物半导体（CMOS）图像传感器及其操作方法。 CMOS图像传感器可以包括形成在半导体衬底中的至少一个浮动扩散区域和与多个像素相对应地设置的薄膜型光传感器。 CMOS图像传感器还可以包括电连接在光传感器和至少一个浮动扩散区域之间的至少一个通孔。 CMOS图像传感器还可以包括设置成对应于多个像素中的至少两个像素的第一微透镜。

公开(公告)号：US20140104942A1

公开(公告)日：2014-04-17

申请号：US14051035

申请日：2013-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Gu JIN ,  Ju Hwan JUNG ,  Yoon Dong PARK

IPC: H01L29/768 ,  H01L27/148 ,  G11C11/4074

CPC classification number: H01L29/768 ,  G11C11/404 ,  G11C11/4074 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/148

Abstract: A recess gate transistor includes: a drain region and a source region in a semiconductor substrate and doped with first-type impurities; a recess region recessed in the semiconductor substrate between the drain region and the source region; a gate insulation layer on the recess region, a gate electrode on the gate insulation layer filling the recess region; and a charge pocket region below the recess region and doped with second-type impurities. A semiconductor chip includes a plurality of recess gate transistors, and an image sensor includes a semiconductor chip including a plurality of recess gate transistors.

Abstract translation: 凹槽栅极晶体管包括：半导体衬底中的漏极区域和源极区域，并掺杂有第一种杂质; 在所述漏极区域和所述源极区域之间凹陷在所述半导体衬底中的凹陷区域; 在所述凹部区域上的栅极绝缘层，在所述栅极绝缘层上填充所述凹部的栅电极; 以及位于凹陷区域下方并掺杂有第二类型杂质的电荷袋区域。 半导体芯片包括多个凹槽栅极晶体管，并且图像传感器包括包括多个凹槽栅极晶体管的半导体芯片。

公开(公告)号：US20140103192A1

公开(公告)日：2014-04-17

申请号：US14051179

申请日：2013-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Yon LEE ,  Ju Hwan JUNG ,  Seok Yong HONG ,  Tae-Chan KIM ,  Dong Ki MIN ,  Yoon Dong PARK ,  Sang-Chul SUL ,  Tae-Seok OH ,  Je Il RYU ,  Kwang-Hyun LEE ,  Young-Gu JIN

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/1464 ,  H04N5/3765

Abstract: A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.

Abstract translation: 二元互补金属氧化物半导体（CMOS）图像传感器包括像素阵列和读出电路。 像素阵列包括具有多个子像素的至少一个像素。 读出电路被配置为使用参考信号量化从像素输出的像素信号。 像素信号对应于从子像素输出的子像素信号，从响应于入射光激活的多个子像素之中。

公开(公告)号：US20140078311A1

公开(公告)日：2014-03-20

申请号：US14030340

申请日：2013-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Wuk CHOI ,  Dong-Wook KWON ,  Jung-Seop KIM ,  Kyung-II KIM ,  Min-Ho KIM ,  Gi-Sang LEE ,  Sang-Bo LEE ,  Jin-Kyung LEE ,  Sun-Tae JUNG ,  Young-Gu JIN

IPC: H04N5/222

CPC classification number: H04N5/2228 ,  A63F13/213 ,  G06F3/0346 ,  H04N21/4126 ,  H04N21/4223 ,  H04N21/44231

Abstract: Methods, systems, and devices for guiding a subject back within the recognizable visual range of a multimedia system are described. According to one of the described methods, when it is determined that the target has left the recognizable range of the multimedia system, sensor information is acquired from a portable electronic device (or controller) the user has been using to control the multimedia system, and the acquired sensor information is used to determine where the user is, relative to the recognizable range. In one example, the user is asked to make a gesture with the portable electronic device, and the sensor information concerning that gesture is used to determine the user's relative location. In another example, the sensor information recorded at the time the user left the recognizable range is used to determine the user's relative location.

Abstract translation: 描述用于在多媒体系统的可识别视觉范围内引导被摄体的方法，系统和装置。 根据所描述的方法之一，当确定目标已经离开多媒体系统的可识别范围时，从用户一直在使用的便携式电子设备（或控制器）获取传感器信息来控制多媒体系统，以及 获取的传感器信息用于确定用户相对于可识别范围的位置。 在一个示例中，要求用户与便携式电子设备进行手势，并且使用关于该手势的传感器信息来确定用户的相对位置。 在另一示例中，在用户离开可识别范围时记录的传感器信息用于确定用户的相对位置。

公开(公告)号：US20170372486A1

公开(公告)日：2017-12-28

申请号：US15636751

申请日：2017-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Gu JIN ,  Jung-Seop KIM ,  Dong-Wook KWON ,  Kyung-II KIM ,  Min-Ho KIM ,  Gi-Sang LEE ,  Sang-Bo LEE ,  Jin-Kyung LEE ,  Jin-Wuk CHOI

IPC: G06T7/254

CPC classification number: G06T7/254 ,  G06T2207/10016 ,  G06T2207/10024 ,  G06T2207/10028 ,  G06T2207/30232 ,  G06T2207/30241

Abstract: A method of recognizing motion of an object may include periodically obtaining depth data of a first resolution and two-dimensional data of a second resolution with respect to a scene using an image capturing device, wherein the second resolution is higher than the first resolution; determining a motion tracking region by recognizing a target object in the scene based on the depth data, such that the motion tracking region corresponds to a portion of a frame and the portion includes the target object; periodically obtaining tracking region data of the second resolution corresponding to the motion tracking region; and/or analyzing the motion of the target object based on the tracking region data.

公开(公告)号：US20150200224A1

公开(公告)日：2015-07-16

申请号：US14535583

申请日：2014-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Hwan JUNG ,  Young-Gu JIN ,  Hiroshige GOTO ,  Hee-Woo PARK ,  Jung-Hyung PYO

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14616

Abstract: A unit pixel includes a sensing transistor, a photo diode, and a reset drain region. The sensing transistor includes a reference active region, an output active region, and a gate. The gate is between the reference active region and the output active region to electrically connect the reference active region to the output active region based on a gate voltage. The reference active region and output active region are within a semiconductor substrate. The photo diode is under the gate within the semiconductor substrate. The reset drain region is within the semiconductor substrate and is electrically connected to the photo diode by the gate based on the gate voltage.

Abstract translation: 单位像素包括感测晶体管，光电二极管和复位漏极区域。 感测晶体管包括参考有源区，输出有源区和栅极。 栅极在参考有源区域和输出有源区之间，以基于栅极电压将参考有源区域电连接到输出有源区域。 参考有源区和输出​​有源区在半导体衬底内。 光电二极管在半导体衬底内的栅极下。 复位漏极区域在半导体衬底内，并且基于栅极电压通过栅极电连接到光电二极管。

公开(公告)号：US20140103401A1

公开(公告)日：2014-04-17

申请号：US14051040

申请日：2013-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Seok OH ,  Tae-Yon LEE ,  Young-Gu JIN ,  Min-Ho KIM ,  Tae-Chan KIM ,  Sang-Chul SUL ,  Kwang-Hyun LEE

IPC: H01L27/148

CPC classification number: H01L27/14806 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14689

Abstract: An image sensor is provided. The image sensor includes a well of a second conductivity type formed on an impurity layer of a first conductivity type, source and drain regions of the first conductivity type, formed in the well to be spaced apart from each other, a first photo diode of the first conductivity type formed in the well to overlap the source and drain regions, a second photo diode of the first conductivity type formed so as not to overlap the source and drain regions and formed to be adjacent to the first photo diode, and a gate electrode formed on the first and second photo diodes.

Abstract translation: 提供图像传感器。 图像传感器包括形成在第一导电类型的杂质层上的第二导电类型的阱，第一导电类型的源极和漏极区域形成在阱中彼此间隔开，第一光电二极管 在阱中形成的与源极和漏极区重叠的第一导电类型，形成为不与源极和漏极区重叠并形成为与第一光电二极管相邻的第一导电类型的第二光电二极管，以及栅电极 形成在第一和第二光电二极管上。