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公开(公告)号：US10714183B2
公开(公告)日：2020-07-14
申请号：US16422213
申请日：2019-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-Kyu Kim , Young-Sun Min , Dae-Seok Byeon , Ho-Kil Lee
Abstract: A high voltage switch circuit includes a first transistor, a first depletion mode transistor, a level shifter, a control signal generator, a second transistor and a second depletion mode transistor. The first transistor transmits the second driving voltage to an output terminal in response to a first gate signal. The first depletion mode transistor transmits the second driving voltage to the first transistor in response to feedback from the output terminal. The control signal generator generates first and second control signals in response to a level-shifted enable signal. The second transistor has a gate electrode connected to the first voltage and is turned on and off in response to the second control signal at a first end of the second transistor. The second depletion mode transistor is connected between a second end of the second transistor and the output terminal, and has a gate electrode receiving the first control signal.
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公开(公告)号：US08982620B2
公开(公告)日：2015-03-17
申请号：US14044892
申请日：2013-10-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ho-Kil Lee , Sung-Joon Kim , Jin-Yub Lee , Sung-Kyu Jo , Seung-Jae Lee , Jong-Hoon Lee
CPC classification number: G11C16/22 , G06F12/0246
Abstract: A method of operating a non-volatile memory includes; during power-on, reading control information from an information block and lock information from an additional information block, then upon determining that a secure block should be locked, generating a lock enable signal that inhibits access to data stored in the secure block, and a read-only enable signal that prevents change in the data stored in the additional information block.
Abstract translation: 一种操作非易失性存储器的方法包括： 在上电期间，从信息块读取控制信息并从附加信息块中锁定信息，然后在确定应该锁定安全块时，产生禁止访问存储在安全块中的数据的锁定使能信号，以及 只读使能信号，防止存储在附加信息块中的数据发生变化。
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