公开(公告)号：US09577317B2

公开(公告)日：2017-02-21

申请号：US14155924

申请日：2014-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Man Kim ,  Hong-Ki Kim ,  Byung-Kyu Kim ,  Sang-Tae Lee ,  Jung-Sik Choi

IPC: H04M1/00 ,  H01Q1/24 ,  H01Q1/52 ,  H01Q7/00 ,  H01P11/00 ,  H01Q1/02 ,  H01Q1/38

CPC classification number: H01Q1/243 ,  H01P11/001 ,  H01Q1/02 ,  H01Q1/38 ,  H01Q1/526 ,  H01Q7/00 ,  Y10T29/49018

Abstract: A portable terminal employing a near field communication antenna with a heat radiation function is provided. The portable terminal includes a cover provided for the portable terminal, and an antenna device mounted on an inner surface of the cover. The antenna device includes a near field communication antenna coupled to a location on the inner surface of the cover, a shield sheet coupled to an upper surface of the antenna, a heat radiation sheet coupled to an upper surface of the shield sheet so as to discharge heat transmitted from the portable terminal, and a protection cover coupled to an upper surface of the heat radiation sheet.

Abstract translation: 提供了采用具有散热功能的近场通信天线的便携式终端。 便携式终端包括为便携式终端提供的盖，以及安装在盖的内表面上的天线装置。 天线装置包括耦合到盖的内表面上的位置的近场通信天线，耦合到天线的上表面的屏蔽片，耦合到屏蔽片的上表面的放热片，以便放电 从便携式终端传输的热量以及耦合到散热片的上表面的保护罩。

公开(公告)号：US11488996B2

公开(公告)日：2022-11-01

申请号：US16824265

申请日：2020-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/335 ,  H04N5/232

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

公开(公告)号：US10608033B2

公开(公告)日：2020-03-31

申请号：US16284703

申请日：2019-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/335 ,  H04N5/232

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

公开(公告)号：US09947707B2

公开(公告)日：2018-04-17

申请号：US14836402

申请日：2015-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

IPC: H01L27/146 ,  H04N5/232 ,  H04N5/335 ,  H04N5/369

CPC classification number: H01L27/1463 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14649 ,  H01L27/14687 ,  H01L27/14689 ,  H04N5/23212 ,  H04N5/335 ,  H04N5/3696

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

公开(公告)号：US10249667B2

公开(公告)日：2019-04-02

申请号：US15926371

申请日：2018-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki Lee ,  Hye-Jung Kim ,  Hong-Ki Kim ,  Kyung-Duck Lee

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/335 ,  H04N5/232

Abstract: An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.