公开(公告)号：US11120998B2

公开(公告)日：2021-09-14

申请号：US16127443

申请日：2018-09-11

申请人： Samsung Electronics Co., Ltd.

发明人： Sang-Hyun Lee ,  Jeon-Il Lee ,  Sung-Woo Kang ,  Hong-Sik Shin ,  Young-Mook Oh ,  Seung-Min Lee

IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/768 ,  H01L21/033 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/3105 ,  H01L29/51

摘要： An etching method includes providing a plasma of a first treatment gas to an etching-object to form a deposition layer on the etching-object, the first treatment gas including a fluorocarbon gas and an inert gas, and the etching-object including a first region including silicon oxide and a second region including silicon nitride, providing a plasma of an inert gas to the etching-object having the deposition layer thereon to activate an etching reaction of the silicon oxide, wherein a negative direct current voltage is applied to an opposing part that is spaced apart from the etching-object so as to face an etching surface of the etching-object, the opposing part including silicon, and subsequently, providing a plasma of a second treatment gas to remove an etching reaction product, the second treatment gas including an inert gas and an oxygen-containing gas.