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    Semiconductor devices and method of manufacturing the same
    2.
    发明授权
    Semiconductor devices and method of manufacturing the same 有权

    公开(公告)号：US11004788B2

    公开(公告)日：2021-05-11

    申请号：US16229781

    申请日：2018-12-21

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Hwi-Chan Jun ,  Seul-Ki Hong ,  Hyun-Soo Kim ,  Sang-Hyun Lee

    IPC分类号： H01L27/088 ,  H01L23/528 ,  H01L29/423 ,  H01L29/417

    摘要： A semiconductor device may include a plurality of active patterns and a plurality of gate structure on a substrate, a first insulating interlayer covering the active patterns and the gate structures, a plurality of first contact plugs extending through the first insulating interlayer, a plurality of second contact plugs extending through the first insulating interlayer, and a first connecting pattern directly contacting a sidewall of at least one contact plug selected from the first and second contact plugs. Each of gate structures may include a gate insulation layer, a gate electrode and a capping pattern. Each of first contact plugs may contact the active patterns adjacent to the gate structure. Each of the second contact plugs may contact the gate electrode in the gate structures. An upper surface of the first connecting pattern may be substantially coplanar with upper surfaces of the first and second contact plugs.

    Docking station for electronic device
    7.
    发明授权
    Docking station for electronic device 有权

    公开(公告)号：US10551873B2

    公开(公告)日：2020-02-04

    申请号：US15892592

    申请日：2018-02-09

    申请人： Samsung Electronics Co., Ltd. ,  R.F. TECH CO., LTD.

    发明人： Yong-Hwa Han ,  Sang-Jun Ahn ,  Chung-Keun Yoo ,  Ui-Jin Lee ,  Sang-Hyun Lee

    IPC分类号： G06F1/16

    摘要： According to various embodiments of the present disclosure, a docking station includes a base housing comprising a first surface having a recessed portion, a second surface directed in an opposite direction to the first surface, and a side surface at least partially surrounding a space between the first surface and the second surface, a slide housing slidably mounted on the recessed portion to open and close at least a part of the recessed portion, and a connection member disposed on the recessed portion, in which as the slide housing slides, the connection member is hidden or exposed, and in a state where the at least the part of the recessed portion is opened, the slide housing is positioned inclined with respect to the first surface or the second surface. The docking station described above may be implemented variously depending on embodiments.

    Method of forming wirings
    10.
    发明授权
    Method of forming wirings 有权
    形成布线的方法

    公开(公告)号：US09287161B2

    公开(公告)日：2016-03-15

    申请号：US14497501

    申请日：2014-09-26

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Sang-Hyun Lee ,  Myeong-Cheol Kim ,  Yoo-Jung Lee ,  Il-Sup Kim ,  Seung-Ju Park

    IPC分类号： H01L21/768 ,  H01L21/311

    CPC分类号： H01L21/76802 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76895

    摘要： A method of manufacturing a wiring includes sequentially forming a first insulation layer, a first layer, and a second layer on a substrate, etching an upper portion of the second layer a plurality of times to form a second layer pattern including a first recess having a shape of a staircase, etching a portion of the second layer pattern and a portion of the first layer under the first recess to form a first layer pattern including a second recess having a shape of a staircase similar to the first recess, etching a portion of the first layer pattern under the second recess to form a first opening exposing a portion of a top surface of the first insulation layer, etching the exposed portion of the first insulation layer to form a second opening through the first insulation layer, and forming a wiring filling the second opening.

    摘要翻译： 一种制造布线的方法包括：在基板上依次形成第一绝缘层，第一层和第二层，多次蚀刻第二层的上部以形成第二层图案，该第二层图案包括具有第 形成阶梯，蚀刻第二层图案的一部分和在第一凹部下方的第一层的一部分，以形成第一层图案，该第一层图案包括具有类似于第一凹部的阶梯形状的第二凹部，蚀刻部分 在第二凹部下方的第一层图案，以形成暴露第一绝缘层的顶表面的一部分的第一开口，蚀刻第一绝缘层的暴露部分以形成穿过第一绝缘层的第二开口，以及形成布线 填补第二个开口。