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公开(公告)号：US20190384163A1
公开(公告)日：2019-12-19
申请号：US16214781
申请日：2018-12-10
发明人： Mun Ja KIM , Changyoung Jeong
IPC分类号： G03F1/62
摘要： A pellicle for a photomask comprises a pellicle membrane. The pellicle membrane includes a base layer having a first surface and a second surface facing the first surface, and a first recovery layer covering the first surface of the base layer. A content of SP2 covalent bonds between carbon atoms contained in the first recovery layer is less than or equal to a content of SP2 covalent bonds between carbon atoms contained in the base layer.
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公开(公告)号：US20190243234A1
公开(公告)日：2019-08-08
申请号：US16125864
申请日：2018-09-10
发明人： Yongseung MOON , Heebom Kim , Changyoung Jeong
摘要： Provided is a pellicle to be used in a photolithography process. The pellicle a film, at least a portion of which includes carbon allotropes. The film has a first surface and a second surface facing the first surface, the film comprises a doped region including dopants, the doped region adjacent to the first surface, the dopants include least one of boron or nitrogen, and the doped region comprises a bond between an atom of at least one of the dopants and a carbon atom.
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公开(公告)号：US11662665B2
公开(公告)日：2023-05-30
申请号：US17672937
申请日：2022-02-16
发明人： Byunghoon Lee , Maenghyo Cho , Changyoung Jeong , Muyoung Kim , Junghwan Moon , Sungwoo Park , Hyungwoo Lee
IPC分类号： G03F7/20 , H01L21/027 , G03F7/40 , G05B19/4099 , G06F30/25
CPC分类号： G03F7/705 , G03F7/40 , G03F7/70033 , G03F7/70608 , G05B19/4099 , G06F30/25 , H01L21/0274 , G05B2219/45031
摘要： A lithography method using a multiscale simulation includes estimating a shape of a virtual resist pattern for a selected resist based on a multiscale simulation; forming a test resist pattern by performing an exposure process on a layer formed of the selected resist; determining whether an error range between the test resist pattern and the virtual resist pattern is in an allowable range; and forming a resist pattern on a patterning object using the selected resist when the error range is in the allowable range. The multiscale simulation may use molecular scale simulation, quantum scale simulation, and a continuum scale simulation, and may model a unit lattice cell of the resist by mixing polymer chains, a photo-acid generator (PAG), and a quencher.
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公开(公告)号：US20220350240A1
公开(公告)日：2022-11-03
申请号：US17712161
申请日：2022-04-03
发明人： Mun Ja Kim , Ji-Beom Yoo , Qicheng Hu , Changyoung Jeong , Ki-Bong Nam , Jin-Ho Yeo
摘要： A method for manufacturing a pellicle according to the technical idea of the present invention includes preparing a support substrate, forming a catalyst layer including nickel (Ni) in which one selected from a (110) plane and a (100) plane is a dominant crystal plane, on the support substrate, and performing a chemical vapor deposition process on the catalyst layer at about 1050° C. or less to form a membrane having a graphite layer.
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公开(公告)号：US12032281B2
公开(公告)日：2024-07-09
申请号：US17889472
申请日：2022-08-17
发明人： Byunghoon Lee , Jin Goo Park , Tae-Gon Kim , Sanguk Park , Changyoung Jeong , Jinho Ahn , Hyun-tae Kim
CPC分类号： G03F1/82 , B08B7/0028 , B08B11/02 , B08B13/00 , G03F7/70925
摘要： A pellicle cleaning apparatus includes a stage to support a pellicle, a particle remover above the stage, the particle remover being configured to remove a particle from a first surface of a pellicle, and the particle remover including a cantilever, and an adhesive material on a bottom surface of the cantilever, and a pressure controller adjacent to the stage, the pressure controller being configured to control a pressure of a fluid on a second surface of the pellicle.
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公开(公告)号：US20210026249A1
公开(公告)日：2021-01-28
申请号：US16593149
申请日：2019-10-04
发明人： Byunghoon Lee , Changyoung Jeong , Byunggook Kim , Maenghyo Cho , Muyoung Kim , Junghwan Moon , Sungwoo Park , Hyungwoo Lee , Joonmyung Choi
IPC分类号： G03F7/20 , G05B19/4097 , H01L21/027
摘要： There are provided a lithography method capable of selecting best resist and a semiconductor device manufacturing method and exposure equipment based on the lithography method. The lithography method includes estimating a shape of a virtual resist pattern based on a multi-scale simulation for resist, forming a test resist pattern by performing exposure on selected resist based on the simulation result, comparing the test resist pattern with the virtual resist pattern, and forming a resist pattern on an object to be patterned by using the resist when an error between the test resist pattern and the virtual resist pattern is in an allowable range.
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公开(公告)号：US12099293B2
公开(公告)日：2024-09-24
申请号：US17328008
申请日：2021-05-24
发明人： Hwanseok Seo , Seongsue Kim , Changyoung Jeong
摘要： A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.
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公开(公告)号：US11448957B2
公开(公告)日：2022-09-20
申请号：US17014561
申请日：2020-09-08
发明人： Mun Ja Kim , Changyoung Jeong
摘要： A pellicle transfer apparatus includes; a base including supporting a target plate, a pellicle and a flexible plate sequentially stacked on the base, and a roller unit laterally movable in a first direction across the base and including a lower roller extending in a second direction intersecting the first direction, and an upper roller above the lower roller and extending in the second direction, wherein the lower roller compresses the flexible plate while the roller unit laterally moves in the first direction across the base to bond the pellicle to the target plate, as the pellicle is separated from the flexible plate, and the flexible plate moves upward to wrap around the lower roller, and the upper roller contacts the flexible plate as it wraps around the lower roller.
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公开(公告)号：US11262648B2
公开(公告)日：2022-03-01
申请号：US16940590
申请日：2020-07-28
发明人： Mun Ja Kim , Changyoung Jeong
IPC分类号： G03F1/62
摘要： A pellicle for a photomask comprises a pellicle membrane. The pellicle membrane incudes a base layer having a first surface and a second surface facing the first surface, and a first recovery layer covering the first surface of the base layer. A content of SP2 covalent bonds between carbon atoms contained in the first recovery layer is less than or equal to a content of SP2 covalent bonds between carbon atoms contained in the base layer.
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公开(公告)号：US10809614B2
公开(公告)日：2020-10-20
申请号：US16214781
申请日：2018-12-10
发明人： Mun Ja Kim , Changyoung Jeong
IPC分类号： G03F1/62
摘要： A pellicle for a photomask comprises a pellicle membrane. The pellicle membrane includes a base layer having a first surface and a second surface facing the first surface, and a first recovery layer covering the first surface of the base layer. A content of SP2 covalent bonds between carbon atoms contained in the first recovery layer is less than or equal to a content of SP2 covalent bonds between carbon atoms contained in the base layer.
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