公开(公告)号：US12062626B2

公开(公告)日：2024-08-13

申请号：US18144902

申请日：2023-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwayoung Lee ,  Heejae Nam ,  Byungmoon Bae ,  Junggeun Shin ,  Hyunsu Sim ,  Junho Yoon ,  Dongjin Lee

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/544

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/544 ,  H01L2223/5446

Abstract: A semiconductor substrate may include a plurality of semiconductor chips and a protection pattern. The semiconductor chips may be divided by two scribe lanes intersecting each other. Corners of the semiconductor chips may be disposed at the intersection of the two scribe lanes. The protection pattern may be arranged at the intersection of the scribe lanes to surround the corners of the semiconductor chips. Thus, the corners of the semiconductor chips may be protected by the protection pattern form colliding with each other in a following grinding process.

公开(公告)号：US20220059472A1

公开(公告)日：2022-02-24

申请号：US17216279

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwayoung Lee ,  Heejae Nam ,  Byungmoon Bae ,  Junggeun Shin ,  Hyunsu Sim ,  Junho Yoon ,  Dongjin Lee

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/544

Abstract: A semiconductor substrate may include a plurality of semiconductor chips and a protection pattern. The semiconductor chips may be divided by two scribe lanes intersecting each other. Corners of the semiconductor chips may be disposed at the intersection of the two scribe lanes. The protection pattern may be arranged at the intersection of the scribe lanes to surround the corners of the semiconductor chips. Thus, the corners of the semiconductor chips may be protected by the protection pattern form colliding with each other in a following grinding process.

公开(公告)号：US20230275037A1

公开(公告)日：2023-08-31

申请号：US18144902

申请日：2023-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwayoung Lee ,  Heejae Nam ,  Byungmoon Bae ,  Junggeun Shin ,  Hyunsu Sim ,  Junho Yoon ,  Dongjin Lee

IPC: H01L23/00 ,  H01L23/544 ,  H01L21/78

CPC classification number: H01L23/562 ,  H01L23/544 ,  H01L21/78 ,  H01L2223/5446

Abstract: A semiconductor substrate may include a plurality of semiconductor chips and a protection pattern. The semiconductor chips may be divided by two scribe lanes intersecting each other. Corners of the semiconductor chips may be disposed at the intersection of the two scribe lanes. The protection pattern may be arranged at the intersection of the scribe lanes to surround the corners of the semiconductor chips. Thus, the corners of the semiconductor chips may be protected by the protection pattern form colliding with each other in a following grinding process.

公开(公告)号：US11676914B2

公开(公告)日：2023-06-13

申请号：US17216279

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwayoung Lee ,  Heejae Nam ,  Byungmoon Bae ,  Junggeun Shin ,  Hyunsu Sim ,  Junho Yoon ,  Dongjin Lee

IPC: H01L23/544 ,  H01L23/00 ,  H01L21/78

CPC classification number: H01L23/562 ,  H01L21/78 ,  H01L23/544 ,  H01L2223/5446

Abstract: A semiconductor substrate may include a plurality of semiconductor chips and a protection pattern. The semiconductor chips may be divided by two scribe lanes intersecting each other. Corners of the semiconductor chips may be disposed at the intersection of the two scribe lanes. The protection pattern may be arranged at the intersection of the scribe lanes to surround the corners of the semiconductor chips. Thus, the corners of the semiconductor chips may be protected by the protection pattern form colliding with each other in a following grinding process.

公开(公告)号：US20230395547A1

公开(公告)日：2023-12-07

申请号：US18205329

申请日：2023-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyun Kweon ,  Yeongbeom Ko ,  Wooju Kim ,  Jungseok Ryu ,  Junho Yoon ,  Hwayoung Lee

IPC: H01L23/00 ,  H10B80/00

CPC classification number: H01L24/08 ,  H10B80/00 ,  H01L2224/08145

Abstract: A semiconductor device includes a first chip structure including a wiring structure disposed on a circuit elements, and first bonding metal layers and a first bonding insulating layer on the wiring structure, an upper surface of the first chip structure having an edge region and an inner region surrounded by the edge region, a second chip structure disposed on an inner region of the upper surface of the first chip structure, and including second bonding metal layers respectively bonded to the first bonding metal layers, a second bonding insulating layer bonded to the first bonding insulating layer, and a memory cell layer on the second bonding metal layers and the second bonding insulating layer, an insulating capping layer disposed on an upper surface of the second chip structure and extending to the edge region, and a connection pad disposed on a region of the insulating capping layer.

公开(公告)号：US20230129020A1

公开(公告)日：2023-04-27

申请号：US17838304

申请日：2022-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwayoung Lee

IPC: H01L21/268 ,  H01L21/683 ,  H01L21/78 ,  B23K26/53 ,  B23K26/03

Abstract: A method of processing a substrate is provided. The method includes mounting a substrate on a concave mounting surface of a mounting table and deforming a surface of the substrate into a concave shape; detecting, by a height sensor, a height of the surface of the substrate in a vertical direction; determining positions of a plurality of first focus points based on height data of the surface of the substrate, detected by the height sensor; and forming a first modification layer in the substrate by irradiating the plurality of first focus points with a laser beam.

公开(公告)号：US20230082384A1

公开(公告)日：2023-03-16

申请号：US17730993

申请日：2022-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho Yoon ,  Yeongbeom Ko ,  Hwayoung Lee ,  Junggeun Shin ,  Hyunsu Sim ,  Kwangyong Lee ,  Jongho Lee

IPC: H01L21/67 ,  H01L21/683 ,  B23K26/53

Abstract: A substrate processing apparatus includes a chuck table including a mounting table having a mounting surface on which a substrate is mounted, wherein the mounting surface is a curved surface; and a laser supply head configured to irradiate the substrate attached to the mounting table with a laser beam.

公开(公告)号：US20220392851A1

公开(公告)日：2022-12-08

申请号：US17674549

申请日：2022-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwayoung Lee ,  Hyunsu Sim ,  Junho Yoon

IPC: H01L23/00 ,  H01L21/304 ,  H01L21/78

Abstract: A method of manufacturing a semiconductor chip includes preparing a semiconductor substrate having an active surface on which a device layer is provided and an inactive surface opposite to the active surface, the device layer having a integrated circuit (IC) areas and a cut area provided between adjacent IC areas; forming anti-collision recesses in regions of the cut area that are adjacent to corners of the IC areas, each of the anti-collision recesses having rounded internal sidewalls, each of the rounded internal sidewalls corresponding to a respective corner of the adjacent corners; forming a modified portion in the semiconductor substrate by irradiating a cut line of the cut area with a laser; polishing the inactive surface of the semiconductor substrate, wherein cracks propagate from the modified portion in a vertical direction of the semiconductor substrate; and separating the IC areas from each other along the cracks to form semiconductor chips.