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    SENSOR-EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
    2.
    发明申请
    SENSOR-EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20220392972A1

    公开(公告)日：2022-12-08

    申请号：US17696272

    申请日：2022-03-16

    申请人： Samsung Electronics Co., Ltd.

    发明人： Chul Joon HEO ,  Kyung Bae PARK ,  Sung Young YUN ,  Hyeongju KIM ,  Feifei FANG ,  Hwijoung SEO ,  Juhyung LIM ,  Taejin CHOI

    IPC分类号： H01L27/32 ,  H01L51/50 ,  H01L27/30

    摘要： A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.

    SENSOR-EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
    3.
    发明公开
    SENSOR-EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240324393A1

    公开(公告)日：2024-09-26

    申请号：US18605134

    申请日：2024-03-14

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sungyoung YUN ,  Kyung Bae PARK ,  Chul Joon HEO ,  Hwijoung SEO

    IPC分类号： H10K59/65 ,  G06V40/13 ,  H10K59/35 ,  H10K59/80 ,  H10K102/00

    CPC分类号： H10K59/65 ,  G06V40/1318 ,  H10K59/353 ,  H10K59/80518 ,  H10K2102/351

    摘要： A sensor-embedded display panel includes a substrate, a plurality of light emitting elements on the substrate and configured to emit light of different wavelength spectra belonging to the visible light wavelength spectrum, and a plurality of sensors on the substrate and configured to selectively sense light of any one of a green wavelength spectrum and a red wavelength spectrum. Each of the sensors includes a photoelectric conversion layer that includes a first wavelength-selective photoelectric conversion material having a first maximum absorption wavelength in a wavelength range of about 500 nm to about 600 nm and a thickness of the buffer layer is about 20 nm to about 50 nm, or the photoelectric conversion layer includes a second wavelength-selective photoelectric conversion material having a second maximum absorption wavelength in a wavelength range of greater than about 600 nm and less than about 750 nm and a thickness of the buffer layer is about 70 nm to about 110 nm.

    SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
    5.
    发明公开
    SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240196635A1

    公开(公告)日：2024-06-13

    申请号：US18459942

    申请日：2023-09-01

    申请人： Samsung Electronics Co., Ltd.

    发明人： Feifei FANG ,  Sungyoung YUN ,  Chul Joon HEO ,  Hyeong-Ju KIM ,  Kyung Bae PARK ,  Hwijoung SEO ,  Tae Jin CHOI

    IPC分类号： H10K39/34 ,  G06V40/13 ,  H10K59/35

    CPC分类号： H10K39/34 ,  G06V40/1318 ,  H10K59/353 ,  H10K2101/40

    摘要： A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.

    ORGANIC PHOTODIODE, SENSOR, CAMERA, AND ELECTRONIC DEVICE
    9.
    发明申请
    ORGANIC PHOTODIODE, SENSOR, CAMERA, AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20230036360A1

    公开(公告)日：2023-02-02

    申请号：US17851775

    申请日：2022-06-28

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sung Young YUN ,  Kyung Bae PARK ,  Chul Joon HEO ,  Feifei FANG ,  Hwijoung SEO

    IPC分类号： H01L51/44 ,  H01L27/30

    摘要： An organic photodiode includes a first electrode including a reflective layer, a second electrode including a semi-transmissive layer, a photoelectric conversion layer between the first electrode and the second electrode and including an organic light absorbing material, and a buffer layer that is at least one of between the reflective layer and the photoelectric conversion layer or between the semi-transmissive layer and the photoelectric conversion layer. The organic photodiode is configured to exhibit at least three external quantum efficiency (EQE) spectra in a wavelength region of about 380 nm to about 3000 nm and each EQE spectrum of the at least three EQE spectra has a full width at half maximum of about 2 nm to about 100 nm.