公开(公告)号：US20230299142A1

公开(公告)日：2023-09-21

申请号：US18051907

申请日：2022-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yehwan Kim ,  Cheongjun Kim ,  Samjong Choi ,  Yeonsook Kim ,  Euido Kim ,  Gayeong Baek ,  Munkeun Lee ,  Hwon Im

IPC: H01L29/10 ,  G11C16/04 ,  H10B41/27 ,  H10B41/40 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00 ,  H01L25/065 ,  H01L23/00 ,  H10B41/35

CPC classification number: H01L29/1079 ,  G11C16/0483 ,  H01L24/08 ,  H01L25/0657 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/08145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2924/1431 ,  H01L2924/1438

Abstract: A memory device includes a substrate, a three-dimensional (3D) NAND memory cell array on the substrate, and a peripheral circuit including a transistor on the substrate. The substrate includes p-type impurities and n-type impurities, a concentration of the n-type impurities in the substrate is lower than a concentration of the p-type impurities in the substrate, and the concentration of the n-type impurities in the substrate is about 2×1014 atoms/cm3 to about 1.5×1015 atoms/cm3 while the concentration of the p-type impurities in the substrate is about 9×1014 atoms/cm3 to about 2×1015 atoms/cm3.