公开(公告)号：US20240400398A1

公开(公告)日：2024-12-05

申请号：US18680657

申请日：2024-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungbeom PARK ,  Samjong Choi ,  Sungbae Kim ,  Jongsoo Kim ,  Joonyoung Choi

IPC: C01B33/037 ,  C01B32/984 ,  C02F1/44 ,  C02F11/122 ,  C02F101/10 ,  C02F103/34 ,  H01L29/16 ,  H01M4/02 ,  H01M4/587

Abstract: A method of recycling silicon wastewater includes forming a silicon slurry from the silicon wastewater using a micro filtration device, forming a silicone cake from the silicon slurry using a filter press, and forming a silicon powder by drying the silicone cake in a reducing atmospheric.

公开(公告)号：US20240319593A1

公开(公告)日：2024-09-26

申请号：US18381335

申请日：2023-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yool Kang ,  Taehui Kwon ,  Dongjun Kim ,  Ahram Suh ,  Miyeon Jung ,  Samjong Choi ,  Ohhwan Kweon ,  Minki Kim ,  Jaehyun Kim ,  Sunggun Shin ,  Seungryul Yoo ,  Heekyung Lee

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0048 ,  G03F7/2004

Abstract: Provided are a thinner composition, which may be generally used for an extreme ultraviolet (EUV) photoresist as well as KrF and ArF photoresists and exhibits improved performance in reduced resist coating (RRC) and edge bead removal (EBR), and which has an excellent pipe cleaning capability, and a method of treating a substrate surface by using the thinner composition. The thinner composition includes a C2-C4 alkylene glycol C1-C4 alkyl ether acetate, a C2-C3 alkylene glycol C1-C4 alkyl ether, and a cycloketone.

公开(公告)号：US20230299142A1

公开(公告)日：2023-09-21

申请号：US18051907

申请日：2022-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yehwan Kim ,  Cheongjun Kim ,  Samjong Choi ,  Yeonsook Kim ,  Euido Kim ,  Gayeong Baek ,  Munkeun Lee ,  Hwon Im

IPC: H01L29/10 ,  G11C16/04 ,  H10B41/27 ,  H10B41/40 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00 ,  H01L25/065 ,  H01L23/00 ,  H10B41/35

CPC classification number: H01L29/1079 ,  G11C16/0483 ,  H01L24/08 ,  H01L25/0657 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/08145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2924/1431 ,  H01L2924/1438

Abstract: A memory device includes a substrate, a three-dimensional (3D) NAND memory cell array on the substrate, and a peripheral circuit including a transistor on the substrate. The substrate includes p-type impurities and n-type impurities, a concentration of the n-type impurities in the substrate is lower than a concentration of the p-type impurities in the substrate, and the concentration of the n-type impurities in the substrate is about 2×1014 atoms/cm3 to about 1.5×1015 atoms/cm3 while the concentration of the p-type impurities in the substrate is about 9×1014 atoms/cm3 to about 2×1015 atoms/cm3.