公开(公告)号：US20240047389A1

公开(公告)日：2024-02-08

申请号：US18141675

申请日：2023-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonmin Lee ,  Jihoon Kim ,  Aenee Jang

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/05 ,  H01L24/80 ,  H01L24/94 ,  H01L24/96 ,  H01L25/0657 ,  H01L24/08 ,  H01L24/06 ,  H01L2924/1431 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/95001 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1434 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2224/80203 ,  H01L2224/08145 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06133 ,  H01L2224/05007 ,  H01L2224/05187 ,  H01L2224/05124 ,  H01L2224/05647 ,  H01L2224/05015 ,  H01L2224/05018 ,  H01L2224/05082 ,  H01L2224/05541 ,  H01L2224/05555 ,  H01L2224/05558 ,  H01L2224/05687

Abstract: A semiconductor package includes a first semiconductor chip including a first substrate, a plurality of first pads disposed on a front surface of the first substrate, a first insulating layer surrounding the plurality of first pads, and a plurality of wiring patterns disposed between the first substrate and the plurality of first pads and electrically connected to the plurality of first pads; and a second semiconductor chip disposed below the first semiconductor chip and including a second substrate, a plurality of second pads disposed on the second substrate and contacting the plurality of first pads, a second insulating layer surrounding the plurality of second pads and contacting the first insulating layer, and a plurality of through-electrodes penetrating through the second substrate to be connected to the plurality of second pads. The plurality of wiring patterns include top wiring patterns adjacent to the plurality of first pads in a direction perpendicular to the front surface. On a plane parallel to the front surface, within a first region having a first shape and first region area from a top down view, first top wiring patterns have a first occupied area between adjacent first pads of a first group of first pads from among the plurality of first pads, and within a second region having the first shape and first region area from a top down view, second top wiring patterns have a second occupied area, larger than the first occupied area, between adjacent first pads of a second group of first pads from among the plurality of first pads. From a top down view, each pad of the first group of first pads has a first area, and each pad of the second group of first pads has a second area, wherein the first area is smaller than a second area.