公开(公告)号：US20170200616A1

公开(公告)日：2017-07-13

申请号：US15377113

申请日：2016-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-sun MIN ,  Yoonjae KIM ,  Sooho SHIN ,  Sunghee HAN

IPC: H01L21/306 ,  H01L21/822 ,  H01L21/265 ,  H01L21/768 ,  H01L21/283 ,  H01L21/308

CPC classification number: H01L21/30604 ,  H01L21/0337 ,  H01L21/26506 ,  H01L21/283 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/76895 ,  H01L21/8221 ,  H01L27/10823 ,  H01L27/10894

Abstract: A method of fabricating a semiconductor device includes sequentially forming a first insulation pattern and an etch stop pattern on a peripheral circuit area of a substrate, forming a first mask pattern on a cell array area of the substrate, the first mask pattern including a pair of first portions extending in parallel and a second portion covering a portion of a sidewall of the etch stop pattern and a portion of a sidewall of the first insulation pattern, forming a second insulation layer covering the etch stop pattern and the first mask pattern, partially etching the etch stop pattern and the second insulation layer to expose the second portion of the first mask pattern, and removing the second portion of the first mask pattern to divide the pair of first portions of the first mask pattern.