Abstract:
A sensing method for an image sensor includes: connecting a first column line with a second column line in response to switch signals; and sensing a first pixel signal generated based on a first signal output from a first pixel and a second signal output from a second pixel, the first pixel and the second pixel being connected to the first column line and the second pixel being connected to the second column line.
Abstract:
A method of operating an image sensor is provided. The method includes detecting a signal related to brightness of an object and generating a control signal which corresponds to a result of the detected signal and adjusting an oversampling number within a range of a single frame time based on the control signal.
Abstract:
An image sensor chip includes a first wafer and a second wafer. The first wafer includes an image sensor having a plurality of sub-pixels, each of which is configured to detect at least one photon and output a sub-pixel signal according to a result of the detection. The image processor is configured to process sub-pixel signals for each sub-pixel and generate image data. The first wafer and the second wafer are formed in a wafer stack structure.
Abstract:
An iris recognition device includes a first lens and a second lens configured to capture images for recognizing a user's iris; a first filter configured to filter an image input via the first lens and output a first signal; a second filter configured to filter an image input via the second lens and output a second signal; and an image sensor including a plurality of sub-pixel groups which each include a plurality of pixels and are configured to receive the first and second signals and output a first image signal and a second image signal that respectively correspond to the first and second signals.
Abstract:
An RGBW image sensor, a binning method in an image sensor, and a computer readable medium for performing the method are provided, and the binning method in an image sensor includes selecting one or more binning target pixels for each of a red pixel, a green pixel, a blue pixel, and a white pixel, constituting a pixel array of an RGBW image sensor with a uniform array pattern, generating binning pixel data for each of the red pixel, the green pixel, the blue pixel, and the white pixel, based on pieces of pixel data corresponding to the binning target pixel, and rearranging pixels, represented by the binning pixel data, to be equal to the entirety or a portion of the uniform array pattern and to be equally spaced apart from each other.
Abstract:
An image sensor according to an example embodiment concepts includes a pixel array including pixels, and each of the pixels includes photoelectric conversion elements. The photoelectric conversion elements independently operating to detect a phase difference. The image sensor further includes a control circuit configured to independently control exposure times of each of the photoelectric conversion elements included in each of the pixels.
Abstract:
An image processing device comprises an image sensor including unit groups comprising a reference group and a conversion group each including pixels and color filters, and is configured to generate image data using the pixels, and an image signal processor which is configured to calculate a hash of the image data, and to select a filter corresponding to the hash to perform filtering, wherein the image signal processor includes a pixel index converter which is configured to convert indexes of the pixels based on a positional relationship between the pixels, a pixel property converter which is configured to convert the properties of the pixels and to convert the hash before conversion, and a filter coefficient converter which is configured to convert filter coefficients of the pixels based on the respective converted pixel index and the respective converted pixel property.
Abstract:
A method of calculating, using a depth sensor, a distance excluding an ambiguity distance including outputting a modulated light signal output from a light source to an object, receiving the modulated light signal reflected by the object, calculating a distance between the light source and the object using the reflected modulated light signal input to photo gates in conjunction with demodulation signals supplied to the photo gates, the calculating including calculating, using the modulated light signal, at least one distance farther than a maximum measurable distance, and setting the at least one distance to be equal to the maximum measurable distance may be provided. A range of the distance farther than the maximum measurable distance can be determined according to a duty ratio of the modulated light signal.
Abstract:
A sub pixel includes a photodetector and a column line output circuit. The photodetector is configured to output an electrical signal based on a detected amount of photons. The column line output circuit is configured to generate an output signal based on the electrical signal. The output signal is one of a current from a current source and a comparison signal indicative of binary output data.
Abstract:
A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.