公开(公告)号：US20240076127A1

公开(公告)日：2024-03-07

申请号：US18201024

申请日：2023-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Kyung LEE ,  Seung Gyu KANG ,  Hyun Jae KANG ,  Young Wook KIM ,  Sang A BANG ,  Yong-Jun AHN ,  Min Kyun LEE ,  Hyun Woo LEE ,  Jeong Hun LIM ,  Jun Hyuk CHANG

IPC: B65G1/04 ,  B65G43/08

CPC classification number: B65G1/0457 ,  B65G1/0464 ,  B65G43/08 ,  B65G2203/0233 ,  B65G2203/044

Abstract: Provided is a ceiling storage system capable of correcting a working position and constantly checking stability of a structure by detecting an amount of change in a facility. According to the ceiling storage system, a transport vehicle moves to an upper portion of a first storage area of a plurality of storage areas in a state of gripping an article, and the transport vehicle measures a first distance value between the transport vehicle and the first storage area using a distance sensor and measures a relative position value between the transport vehicle and the first storage area using a vision sensor, before unloading the article from the first storage area.

公开(公告)号：US20170148643A1

公开(公告)日：2017-05-25

申请号：US15355360

申请日：2016-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Boo Hyun HAM ,  Hyun Jae KANG ,  Sung Sik PARK ,  Yong Kug BAE ,  Kwang Sub YOON ,  Bum Joon YOUN ,  Hyun Chang LEE

IPC: H01L21/311 ,  H01L23/544 ,  H01L21/033 ,  H01L21/027

Abstract: A method of forming a pattern of a semiconductor device includes forming a mask and a sacrificial layer on a substrate, etching the sacrificial layer in a first area of the substrate to form first units, each having a first width and a first distance from an adjacent unit, etching the sacrificial layer in a second area of the substrate to form second units, each having a second width equal to the first distance and being spaced apart from an adjacent unit by a second distance equal to the first width, forming a spacer conformally covering the first and second units, the spacer having a first thickness and being merged between the second units, removing a portion of the spacer on upper surfaces of the first and second units, and etching the mask in a region from which first and second units have been removed.