公开(公告)号：US20170372906A1

公开(公告)日：2017-12-28

申请号：US15409813

申请日：2017-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun Kyeong JANG ,  Sang Jin KIM ,  Dong Woon PARK ,  Joon Soo PARK ,  Chang Jae YANG ,  Kwang Sub YOON ,  Hye Kyoung JUE

IPC: H01L21/28 ,  H01L21/033 ,  H01L21/8234

CPC classification number: H01L21/28123 ,  H01L21/0337 ,  H01L21/28132 ,  H01L21/32139 ,  H01L21/823431 ,  H01L21/823456

Abstract: A method for fabricating a semiconductor device includes stacking a semiconductor layer, a first sacrificial layer, and a second sacrificial layer, patterning the second sacrificial layer to form a second sacrificial pattern, forming a spacer pattern on both sides of the second sacrificial pattern, wherein a pitch of the spacer pattern is constant, and a width of the spacer pattern is constant, removing the second sacrificial pattern, forming a mask layer that covers the spacer pattern, forming a supporting pattern on the mask layer, wherein a width of the supporting pattern is greater than a width of the spacer pattern, and the supporting pattern is overlapped with the spacer pattern, transferring the supporting pattern and the spacer pattern onto the first sacrificial layer to form gate and supporting patterns, and transferring the gate and supporting patterns onto the semiconductor layer to form a gate and a supporting gate.

公开(公告)号：US20180096840A1

公开(公告)日：2018-04-05

申请号：US15490976

申请日：2017-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Chul JEONG ,  Tae Kyu LEE ,  Sung Sik PARK ,  Joon Soo PARK ,  Kwang Sub YOON ,  Boo Hyun HAM

IPC: H01L21/027 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  G03F7/32 ,  G03F7/09 ,  G03F7/095

CPC classification number: H01L21/0276 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/427 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/823431

Abstract: A method for manufacturing a semiconductor device includes forming an etch target layer on a semiconductor substrate, forming a first photoresist pattern disposed on the etch target layer, irradiating ultraviolet (UV) light in an oxygen-containing atmosphere to remove the first photoresist pattern from the etch target layer, and forming a second photoresist pattern on the etch target layer.

公开(公告)号：US20170148643A1

公开(公告)日：2017-05-25

申请号：US15355360

申请日：2016-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Boo Hyun HAM ,  Hyun Jae KANG ,  Sung Sik PARK ,  Yong Kug BAE ,  Kwang Sub YOON ,  Bum Joon YOUN ,  Hyun Chang LEE

IPC: H01L21/311 ,  H01L23/544 ,  H01L21/033 ,  H01L21/027

Abstract: A method of forming a pattern of a semiconductor device includes forming a mask and a sacrificial layer on a substrate, etching the sacrificial layer in a first area of the substrate to form first units, each having a first width and a first distance from an adjacent unit, etching the sacrificial layer in a second area of the substrate to form second units, each having a second width equal to the first distance and being spaced apart from an adjacent unit by a second distance equal to the first width, forming a spacer conformally covering the first and second units, the spacer having a first thickness and being merged between the second units, removing a portion of the spacer on upper surfaces of the first and second units, and etching the mask in a region from which first and second units have been removed.