公开(公告)号：US11443791B2

公开(公告)日：2022-09-13

申请号：US16848140

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung Kim ,  Ji Yean Kim ,  Hyun Taek Jung ,  Ji Eun Kim ,  Tae Seong Kim ,  Sang-Hoon Jung ,  Jae Wook Joo

IPC: G11C11/16

Abstract: Magnetic junction memory devices and methods for writing data to memory devices are provided. The magnetic junction memory device includes a first memory bank including first magnetic junction memory cells, a first local write driver adjacent to the first memory bank, connected to global data lines, the first local write driver configured to write data to the first magnetic junction memory cells via local data lines, a second memory bank adjacent to the first memory bank and including second magnetic junction memory cells, a second local write driver adjacent to the second memory bank, connected to the global data lines, the second local write driver configured to write data to the second magnetic junction memory cells via local data lines, and a global write driver configured to provide first and second write data to the first and second local write driver, respectively, via the global data lines.

公开(公告)号：US20130265833A1

公开(公告)日：2013-10-10

申请号：US13747200

申请日：2013-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mark Pyo ,  Hyun Taek Jung

IPC: G11C7/12 ,  G11C5/14

CPC classification number: G11C7/12 ,  G11C5/147 ,  G11C7/08 ,  G11C11/4091

Abstract: A semiconductor device and a method of operating the same, the semiconductor device including a sense amplifier connected between a bit line and a complementary bit line; a first power supply circuit configured to select between supplying a power supply voltage to the first node and blocking the power supply voltage from the first node in response to a first control signal; a second power supply circuit configured to select between supplying a ground voltage to the second node and blocking the ground voltage from the second node in response to a second control signal; and a first boosting circuit configured to boost a voltage at the first node in response to a third control signal.

Abstract translation: 一种半导体器件及其操作方法，所述半导体器件包括连接在位线和互补位线之间的读出放大器; 第一电源电路，被配置为响应于第一控制信号，在向第一节点提供电源电压并且阻止来自第一节点的电源电压之间进行选择; 第二电源电路，被配置为响应于第二控制信号，在向第二节点提供接地电压和阻止来自第二节点的接地电压之间进行选择; 以及第一升压电路，被配置为响应于第三控制信号而升高第一节点处的电压。

公开(公告)号：US11139012B2

公开(公告)日：2021-10-05

申请号：US16814678

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suk-Soo Pyo ,  Hyun Taek Jung

IPC: G11C11/16 ,  H01L43/02 ,  H01L27/22

Abstract: A nonvolatile memory device includes a memory cell comprising a first variable resistor having one end connected to a first node, and the other end connected to a second node through a cell transistor; and a reference cell comprising a second variable resistor having one end connected to a third node, and the other end connected to a fourth node through a reference cell transistor, wherein gates of the cell transistor and the reference cell transistor are connected to a word line. Directions of a first read current flowing in the memory cell and a direction of a second read current flowing in the reference cell are opposite to each other.

公开(公告)号：US08842483B2

公开(公告)日：2014-09-23

申请号：US13747200

申请日：2013-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mark Pyo ,  Hyun Taek Jung

IPC: G11C7/00

CPC classification number: G11C7/12 ,  G11C5/147 ,  G11C7/08 ,  G11C11/4091

Abstract: A semiconductor device and a method of operating the same, the semiconductor device including a sense amplifier connected between a bit line and a complementary bit line; a first power supply circuit configured to select between supplying a power supply voltage to the first node and blocking the power supply voltage from the first node in response to a first control signal; a second power supply circuit configured to select between supplying a ground voltage to the second node and blocking the ground voltage from the second node in response to a second control signal; and a first boosting circuit configured to boost a voltage at the first node in response to a third control signal.

Abstract translation: 一种半导体器件及其操作方法，所述半导体器件包括连接在位线和互补位线之间的读出放大器; 第一电源电路，被配置为响应于第一控制信号，在向第一节点提供电源电压并且阻止来自第一节点的电源电压之间进行选择; 第二电源电路，被配置为响应于第二控制信号，在向第二节点提供接地电压和阻止来自第二节点的接地电压之间进行选择; 以及第一升压电路，被配置为响应于第三控制信号而升高第一节点处的电压。

公开(公告)号：US12014763B2

公开(公告)日：2024-06-18

申请号：US17882790

申请日：2022-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung Kim ,  Ji Yean Kim ,  Hyun Taek Jung ,  Ji Eun Kim ,  Tae Seong Kim ,  Sang-Hoon Jung ,  Jae Wook Joo

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1673

Abstract: Magnetic junction memory devices and methods for writing data to memory devices are provided. The magnetic junction memory device includes a first memory bank including first magnetic junction memory cells, a first local write driver adjacent to the first memory bank, connected to global data lines, the first local write driver configured to write data to the first magnetic junction memory cells via local data lines, a second memory bank adjacent to the first memory bank and including second magnetic junction memory cells, a second local write driver adjacent to the second memory bank, connected to the global data lines, the second local write driver configured to write data to the second magnetic junction memory cells via local data lines, and a global write driver configured to provide first and second write data to the first and second local write driver, respectively, via the global data lines.