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    Three-dimensional semiconductor memory devices
    1.
    发明授权
    Three-dimensional semiconductor memory devices 有权

    公开(公告)号：US10937797B2

    公开(公告)日：2021-03-02

    申请号：US16243236

    申请日：2019-01-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seongjun Seo ,  Hyun-Seok Na ,  Heejueng Lee ,  Heung Jin Joo

    IPC: H01L27/11575 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11548 ,  H01L29/06 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11573 ,  H01L27/11529 ,  H01L27/11565

    Abstract: A three-dimensional semiconductor memory device may include a substrate including a cell array region, a peripheral circuit region, and a connection region between the cell array region and the peripheral circuit region. The memory device may include an electrode structure extending from the cell array region toward the connection region and comprising electrodes stacked on the substrate, a horizontal gate dielectric layer between the electrode structure and the substrate and including a first portion on the cell array region and a second portion on the connection region, the second portion thicker than the first portion in the vertical direction, first vertical channels on the cell array region and penetrating the electrode structure and the first portion of the horizontal gate dielectric layer, and second vertical channels on the connection region and penetrating the electrode structure and the second portion of the horizontal gate dielectric layer.

    Methods of Fabricating Nonvolatile Memory Devices and Related Devices
    3.
    发明申请
    Methods of Fabricating Nonvolatile Memory Devices and Related Devices 有权
    制造非易失性存储器件和相关器件的方法

    公开(公告)号：US20130183818A1

    公开(公告)日：2013-07-18

    申请号：US13742554

    申请日：2013-01-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Seok Na ,  Ji-Hwon Lee ,  Joong-Shik Shin ,  Chang-Sun Lee

    IPC: H01L29/66

    CPC classification number: H01L29/66477 ,  H01L21/28273 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/764 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

    Abstract: Provided is a fabricating method of a nonvolatile memory. The fabricating method includes forming a plurality of gates extending in a first direction on a substrate to be adjacent to each other, forming a gap-fill layer filling at least a portion of a space between the plurality of gates, forming a supporter pattern supporting the plurality of gates on the plurality of gates and the gap-fill layer, and forming an air gap in the space between the plurality of gates by removing the gap-fill layer.

    Abstract translation: 提供了一种非易失性存储器的制造方法。 该制造方法包括：形成在基板上沿第一方向延伸的多个栅极彼此相邻，形成填充多个栅极之间的空间的至少一部分的间隙填充层，形成支撑图案的支撑图案 多个栅极上的多个栅极和间隙填充层，并且通过去除间隙填充层在多个栅极之间的空间中形成气隙。

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