公开(公告)号：US10790147B2

公开(公告)日：2020-09-29

申请号：US15960583

申请日：2018-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Hee Lee ,  Se-Ran Oh ,  Hyun-Su Kim ,  Ik-Soo Kim ,  Seong-Gil Park ,  Geun-O Jeong

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/3215

Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.

公开(公告)号：US11114881B2

公开(公告)日：2021-09-07

申请号：US16436574

申请日：2019-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Jin Jeong ,  Hyun-Su Kim

IPC: H02J7/00 ,  G01R19/165 ,  H01M10/42 ,  H02M3/07 ,  H01M10/48 ,  G05F1/46 ,  H01M10/44

Abstract: A load switch circuit includes a charging transistor, a current sensor, a voltage sensor, a selector, a current controller and a mode controller. The charging transistor is connected between a first switch node and a second switch node and controls a charging current in response to a charging control signal. The current sensor is connected to the first switch node and the second switch node and senses the charging current to generate a current sensing signal. The voltage sensor is connected to the first switch node and the second switch node and senses a source-drain voltage of the charging transistor to generate a voltage sensing signal. The selector selects the current sensing signal or the voltage sensing signal in response to a mode signal to generate a selection voltage signal. The current controller compares the selection voltage signal with a reference voltage to generate the charging control signal.