公开(公告)号：US20170110656A1

公开(公告)日：2017-04-20

申请号：US15227334

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehun Seo ,  Jong-Kyu Kim ,  Jung-Ik Oh ,  Inho Kim ,  Jongchul Park ,  Gwang-Hyun Baek ,  Hyun-woo Yang

IPC: H01L43/12 ,  H01L43/08 ,  H01L21/768 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L21/02071 ,  H01L21/32138 ,  H01L27/222

Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.

公开(公告)号：US10236442B2

公开(公告)日：2019-03-19

申请号：US15227334

申请日：2016-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehun Seo ,  Jong-Kyu Kim ,  Jung-Ik Oh ,  Inho Kim ,  Jongchul Park ,  Gwang-Hyun Baek ,  Hyun-woo Yang

IPC: H01L43/12 ,  H01L21/3213 ,  H01L21/02 ,  H01L27/22

Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.

公开(公告)号：US09698198B2

公开(公告)日：2017-07-04

申请号：US14602490

申请日：2015-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Seok Choi ,  Jaehun Seo ,  Hyun-woo Yang ,  Jongchul Park

IPC: H01L29/66 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.