公开(公告)号：US20180158516A1

公开(公告)日：2018-06-07

申请号：US15706859

申请日：2017-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： INGYU PARK ,  Inhak Lee ,  Chanho Lee ,  Jaeseung Choi

IPC: G11C11/419 ,  G11C11/412

CPC classification number: G11C11/419 ,  G11C5/063 ,  G11C5/14 ,  G11C5/147 ,  G11C7/1096 ,  G11C11/412 ,  H01L27/1104

Abstract: A static random access memory device includes a plurality of memory cells arranged in rows and columns, a write driver configured to apply a bit line voltage corresponding to write data to a bit line extending in a column direction of the plurality of memory cells in a write operation, and a sub power line configured to transmit a cell driving voltage to the plurality of memory cells in the write operation and to extend in a direction parallel to the bit line, and includes a first node and a second node. The cell driving voltage is applied to the first node of the sub power line and the first node of the sub power line is aligned with an output node of the write driver in a row direction of the plurality of memory cells.