公开(公告)号：US20220293600A1

公开(公告)日：2022-09-15

申请号：US17522051

申请日：2021-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHEOL KIM ,  JONGCHUL PARK ,  HYUNHO JUNG

IPC: H01L27/092 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first and second active regions. A first active pattern is on the first active region and includes first source/drain patterns and a first channel pattern therebetween. A second active pattern is on the second active region and includes second source/drain patterns and a second channel pattern therebetween. A gate electrode includes a first gate electrode on the first channel pattern and a second gate electrode on the second channel pattern. A gate cutting pattern is between the first and second gate electrodes and separates the first and second gate electrodes from each other. A pair of gate spacers is on opposite sidewalls of the first gate electrode extending along opposite sidewalls of the gate cutting pattern towards the second gate electrode. The gate cutting pattern includes first to third parts having maximum widths that increase from the first to the third part.

公开(公告)号：US20170062702A1

公开(公告)日：2017-03-02

申请号：US15350009

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungyoon CHUNG ,  JINHYE BAE ,  HYUNGJOON KWON ,  JONGCHUL PARK ,  WONJUN LEE

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A method of manufacturing a semiconductor device may include forming a material layer on a substrate, performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized, and etching the material layer through the second surface to form a material pattern. An etch rate of the capping oxide layer is less than an etch rate of the material layer. A semiconductor device may include a lower electrode on a substrate, a data storage part on a top surface of the lower electrode, an upper electrode on the data storage part, and a capping oxide layer arranged on at least a portion of a top surface of the upper electrode. The capping oxide layer may include an oxide formed by oxidation of an upper surface of the upper electrode.

Abstract translation: 制造半导体器件的方法可以包括在衬底上形成材料层，进行选择性氧化工艺以在材料层的第一表面上形成覆盖氧化物层，其中材料层的第二表面不被氧化，以及 通过第二表面蚀刻材料层以形成材料图案。 覆盖氧化物层的蚀刻速率小于材料层的蚀刻速率。 半导体器件可以包括在基板上的下电极，在下电极的顶表面上的数据存储部分，数据存储部分上的上电极，以及覆盖氧化物层，其设置在 上电极。 覆盖氧化物层可以包括通过氧化上部电极的上表面形成的氧化物。