公开(公告)号：US20220130467A1

公开(公告)日：2022-04-28

申请号：US17377141

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAE-DUK YU ,  SANG-WAN NAM ,  JONGHOON PARK ,  HO-JUN LEE

IPC: G11C16/26 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  G11C16/04 ,  G11C16/08

Abstract: An operation method of a nonvolatile memory device includes receiving a read command and an address, increasing a voltage applied to an unselected word line from an off voltage to a read pass voltage during a setup phase in response to the read command, increasing a voltage applied to an unselected string selection line from the off voltage to a pre-pulse voltage during a first setup phase of the setup phase, increasing a voltage applied to an unselected ground selection line from the off voltage to the pre-pulse voltage during the first setup phase, applying a read voltage to a selected word line to read data corresponding to the address, during a sensing phase following the setup phase, and outputting the read data through data lines after the sensing phase. During the setup phase, a slope of the voltage applied to the unselected word line is varied.

公开(公告)号：US20170337981A1

公开(公告)日：2017-11-23

申请号：US15670290

申请日：2017-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HO-JUN LEE ,  SANG-HYUN JOO

IPC: G11C16/34 ,  G11C16/16 ,  G11C16/10 ,  G11C16/08 ,  G11C16/26 ,  G11C16/04

CPC classification number: G11C16/3495 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/3445 ,  G11C16/3459 ,  G11C29/021 ,  G11C29/028 ,  G11C29/12005 ,  G11C29/26 ,  G11C29/50004 ,  G11C2029/0409 ,  G11C2029/1202 ,  G11C2029/1204

Abstract: A method of operating a non-volatile memory device includes selecting a first select transistor from among a plurality of select transistors included in a NAND string, and performing a check operation on a first threshold voltage of the first select transistor. The check operation includes comparing the first threshold voltage with a first lower-limit reference voltage level, and performing a program operation on the first select transistor when the first threshold voltage is lower than the first lower-limit reference voltage level. When the first threshold voltage is equal to or higher than the first lower-limit reference voltage level, the check operation on the first threshold voltage is ended.

公开(公告)号：US20220005671A1

公开(公告)日：2022-01-06

申请号：US17148037

申请日：2021-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNG BO SHIM ,  DOUG YONG SUNG ,  HO-JUN LEE ,  JEE HUN JEONG ,  SUNG HWAN CHO ,  JU-HONG CHA

IPC: H01J37/32

Abstract: An inductively coupled plasma processing apparatus includes a lower chamber providing a space for a substrate, a high-frequency antenna configured to generate inductively coupled plasma in the lower chamber, dielectric windows disposed between the lower chamber and the high-frequency antenna, metal windows alternatingly disposed between the dielectric windows, and gas inlet pipes disposed in each of the metal windows, wherein each of the gas inlet pipes includes nozzles configured to introduce gases to the lower chamber.