公开(公告)号：US09978865B2

公开(公告)日：2018-05-22

申请号：US15385060

申请日：2016-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong Kwon ,  Youngho Lee ,  Hoon Lim ,  Hyungsoon Jang ,  Eunguk Chung

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L27/11 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/7833 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1104 ,  H01L28/00 ,  H01L29/0852 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66681 ,  H01L29/7834 ,  H01L29/7848

Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.

公开(公告)号：US20180219094A1

公开(公告)日：2018-08-02

申请号：US15928516

申请日：2018-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong Kwon ,  Youngho Lee ,  Hoon Lim ,  Hyungsoon Jang ,  Eunguk Chung

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/08 ,  H01L27/092 ,  H01L27/11

CPC classification number: H01L29/7833 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1104 ,  H01L28/00 ,  H01L29/0852 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66681 ,  H01L29/7834 ,  H01L29/7848

Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.

公开(公告)号：US10269958B2

公开(公告)日：2019-04-23

申请号：US15928516

申请日：2018-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong Kwon ,  Youngho Lee ,  Hoon Lim ,  Hyungsoon Jang ,  Eunguk Chung

IPC: H01L29/78 ,  H01L27/092 ,  H01L27/11 ,  H01L29/08 ,  H01L29/16 ,  H01L29/66 ,  H01L21/8238 ,  H01L49/02 ,  H01L29/10 ,  H01L29/165

Abstract: A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.