公开(公告)号：US10428242B2

公开(公告)日：2019-10-01

申请号：US15897261

申请日：2018-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doo-sik Moon ,  Sang-hyun Park ,  Bo-un Yoon ,  Ho-young Kim ,  Se-jung Park ,  Jae-hak Lee ,  Jin-myung Hwang

IPC: C09G1/02 ,  C09K3/14

Abstract: A slurry composition for chemical mechanical polishing, the slurry composition including ceramic polishing particles; a dispersion agent; a pH control agent and an additive having affinity with silicon nitride.

公开(公告)号：US09991127B2

公开(公告)日：2018-06-05

申请号：US15286976

申请日：2016-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hyun Park ,  Jae-hak Lee ,  Bo-hyeok Choi ,  Sang-kyun Kim ,  Won-ki Hur

IPC: H01L21/306 ,  C09G1/02 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/30625 ,  C09G1/02 ,  H01L21/02532 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258

Abstract: A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.

公开(公告)号：US20170207100A1

公开(公告)日：2017-07-20

申请号：US15286976

申请日：2016-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-hyun Park ,  Jae-hak Lee ,  Bo-hyeok Choi ,  Sang-kyun Kim ,  Won-ki Hur

IPC: H01L21/306 ,  H01L21/02 ,  C09G1/02 ,  H01L21/308

CPC classification number: H01L21/30625 ,  C09G1/02 ,  H01L21/02532 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258

Abstract: A method of fabricating an integrated circuit device may include forming a polishing stop layer and a semiconductor layer on a substrate, and selectively polishing the semiconductor layer from a surface which simultaneously exposes the polishing stop layer and the semiconductor layer, by using a slurry composition including a compound composition and polishing particles. The compound composition may include a sulfonate compound and a terminal amine group-including compound.