公开(公告)号：US09334582B2

公开(公告)日：2016-05-10

申请号：US14602447

申请日：2015-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-uk Seo ,  Byoung-kyun Kim ,  Suk-ho Yoon ,  Keon-hun Lee ,  Kee-won Lee ,  Do-young Rhee ,  Sang-don Lee

IPC: H01L21/66 ,  C30B25/08 ,  H01L33/06 ,  G01N21/95 ,  H01L21/02 ,  H01L33/00

CPC classification number: C30B25/08 ,  C30B25/00 ,  C30B25/16 ,  C30B29/406 ,  G01N21/9501 ,  H01L21/0254 ,  H01L21/0262 ,  H01L22/12 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06

Abstract: An apparatus for evaluating the quality of a crystal includes an optical device that measures a surface reflectance of a wafer in which a V-pit is formed; and a data processing unit that calculates a threading dislocation density by calculating a difference in surface reflectance of the wafer that is measured by the optical device.

Abstract translation: 一种用于评估晶体质量的装置包括测量其中形成V凹坑的晶片的表面反射率的光学装置; 以及数据处理单元，其通过计算由所述光学装置测量的所述晶片的表面反射率的差异来计算穿透位错密度。

公开(公告)号：US20190123237A1

公开(公告)日：2019-04-25

申请号：US15906539

申请日：2018-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan SAKONG ,  Byoung-kyun Kim ,  Jin-young Lim ,  Jae-sung Hyun

IPC: H01L33/02 ,  H01L33/32 ,  H01L33/12 ,  H01L33/06 ,  H01L33/00

Abstract: A light-emitting device includes a light-emitting structure including a first-conductivity-type nitride semiconductor layer on a substrate, an active layer on the first-conductivity-type nitride semiconductor layer, and a second-conductivity-type nitride semiconductor layer on the active layer, and a buffer layer between the substrate and the light-emitting structure. The buffer layer includes a plurality of voids. The plurality of voids extend vertically into the buffer layer from a surface of the buffer layer. The surface of the buffer layer is proximate to the light-emitting structure. The plurality of voids have different horizontal sectional areas.