公开(公告)号：US20180358379A1

公开(公告)日：2018-12-13

申请号：US16108173

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hauk HAN ,  Je-Hyeon PARK ,  Kihyun YOON ,  Changwon LEE ,  HyunSeok LIM ,  Jooyeon HA

IPC: H01L27/11582 ,  H01L23/535 ,  H01L27/1157

CPC classification number: H01L27/11582 ,  H01L21/76847 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

Abstract: A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.