公开(公告)号：US20230135639A1

公开(公告)日：2023-05-04

申请号：US17888647

申请日：2022-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keun LEE ,  Kihyun YOON ,  Jeonggil LEE ,  Hauk HAN

IPC: H01L27/11556 ,  H01L29/423

Abstract: An electrode structure includes a conductive electrode, the conductive electrode including a first surface, an insulating layer on the conductive electrode, the insulating layer being in contact with the first surface of the conductive electrode, and a nano dot pattern in the conductive electrode and spaced apart from the first surface of the conductive electrode, the nano dot pattern including nano dots arranged in parallel to the first surface of the conductive electrode, and each of the nano dots including a first side surface adjacent to the first surface of the conductive electrode, the first side surface being flat and parallel to the first surface of the conductive electrode, and a second side surface opposite to the first side surface, the second side surface being convex in a direction away from the first surface of the conductive electrode.

公开(公告)号：US20180358379A1

公开(公告)日：2018-12-13

申请号：US16108173

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hauk HAN ,  Je-Hyeon PARK ,  Kihyun YOON ,  Changwon LEE ,  HyunSeok LIM ,  Jooyeon HA

IPC: H01L27/11582 ,  H01L23/535 ,  H01L27/1157

CPC classification number: H01L27/11582 ,  H01L21/76847 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

Abstract: A semiconductor device includes a lower structure including a lower conductor, an upper structure having an opening exposing the lower conductor on the lower structure, and a connection structure filling the opening and connected to the lower conductor. The connection structure includes a first tungsten layer covering an inner surface of the opening and defining a recess region in the opening, and a second tungsten layer filling the recess region on the first tungsten layer. A grain size of the second tungsten layer in an upper portion of the connection structure is greater than a grain size of the second tungsten layer in a lower portion of the connection structure.

公开(公告)号：US20180374451A1

公开(公告)日：2018-12-27

申请号：US16065988

申请日：2016-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjoo KANG ,  Tae-Young KANG ,  Jaeyeon RHO ,  Yongsoung LEE ,  Chang-Youl LEE ,  Tae-Young HA ,  Sujin PARK ,  Kihyun YOON ,  In-Don JU ,  Jaemo CHOI

IPC: G09G5/10 ,  G06F3/14

Abstract: Disclosed are an electronic device and an operation method thereof according to various embodiment, the method comprising: reproducing first content on a first display unit having variable transparency; detecting an object in response to the first display unit; controlling transparency in at least a partial area of the first display unit on the basis of the object; and reproducing second content on a second display unit, disposed to be spaced from the first display unit.