SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

    公开(公告)号:US20230135639A1

    公开(公告)日:2023-05-04

    申请号:US17888647

    申请日:2022-08-16

    IPC分类号: H01L27/11556 H01L29/423

    摘要: An electrode structure includes a conductive electrode, the conductive electrode including a first surface, an insulating layer on the conductive electrode, the insulating layer being in contact with the first surface of the conductive electrode, and a nano dot pattern in the conductive electrode and spaced apart from the first surface of the conductive electrode, the nano dot pattern including nano dots arranged in parallel to the first surface of the conductive electrode, and each of the nano dots including a first side surface adjacent to the first surface of the conductive electrode, the first side surface being flat and parallel to the first surface of the conductive electrode, and a second side surface opposite to the first side surface, the second side surface being convex in a direction away from the first surface of the conductive electrode.