公开(公告)号：US20160035788A1

公开(公告)日：2016-02-04

申请号：US14659806

申请日：2015-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Kuk KIM ,  Young-Wook PARK ,  Jeon-Il LEE ,  Hyun-Jung LEE

IPC: H01L27/22 ,  H01L29/66 ,  H01L43/12 ,  H01L29/423 ,  H01L29/45 ,  H01L43/08 ,  H01L21/8234 ,  H01L27/108

CPC classification number: H01L27/228 ,  H01L21/28518 ,  H01L21/76897 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/665 ,  H01L29/66621 ,  H01L43/08 ,  H01L43/12

Abstract: Active patterns spaced apart from each other by an isolation layer are formed in a substrate. Gate structures extending in the isolation layer through the active patterns are formed. Each active pattern is divided into a central portion and a peripheral portion facing the central portion by the gate structures. A protrusion of at least one of active pattern is formed. The protrusion is exposed from a top surface of the isolation layer, and transformed into silicide such that a first silicide ohmic pad is formed at the central portion of the active pattern and a second silicide ohmic pad is formed at the peripheral portion of the active pattern. A conductive line structure electrically connected to the first silicide ohmic pad is formed. A conductive contact electrically connected to the second silicide ohmic pad is formed. A data storage unit electrically connected to the conductive contact is formed.

Abstract translation: 在衬底中形成通过隔离层彼此间隔开的有源图案。 形成通过有源图案在隔离层中延伸的门结构。 每个活动图案被门结构分成中心部分和面向中心部分的周边部分。 形成有源图案中的至少一个的突起。 突起从隔离层的顶表面露出，并转变为硅化物，使得在有源图案的中心部分处形成第一硅化物欧姆垫，并且在活性图案的周边部分形成第二硅化物欧姆垫 。 形成电连接到第一硅化物欧姆垫的导电线结构。 形成电连接到第二硅化物欧姆垫的导电接触。 形成与导体接触部电连接的数据存储部。

公开(公告)号：US20190164774A1

公开(公告)日：2019-05-30

申请号：US16127443

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hyun LEE ,  Jeon-Il LEE ,  Sung-Woo KANG ,  Hong-Sik SHIN ,  Young-Mook OH ,  Seung-Min LEE

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/768 ,  H01L21/033 ,  H01L21/8234

Abstract: An etching method includes providing a plasma of a first treatment gas to an etching-object to form a deposition layer on the etching-object, the first treatment gas including a fluorocarbon gas and an inert gas, and the etching-object including a first region including silicon oxide and a second region including silicon nitride, providing a plasma of an inert gas to the etching-object having the deposition layer thereon to activate an etching reaction of the silicon oxide, wherein a negative direct current voltage is applied to an opposing part that is spaced apart from the etching-object so as to face an etching surface of the etching-object, the opposing part including silicon, and subsequently, providing a plasma of a second treatment gas to remove an etching reaction product, the second treatment gas including an inert gas and an oxygen-containing gas.