公开(公告)号：US10032886B2

公开(公告)日：2018-07-24

申请号：US15170230

申请日：2016-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Yup Chung ,  Hyun-Jo Kim ,  Seong-Yul Park ,  Se-Wan Park ,  Jong-Mil Youn ,  Jeong-Hyo Lee ,  Hwa-Sung Rhee ,  Hee-Don Jeong ,  Ji-Yong Ha

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/092 ,  H01L29/08 ,  H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/165

Abstract: A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.

公开(公告)号：US10170366B2

公开(公告)日：2019-01-01

申请号：US15436343

申请日：2017-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun You ,  Jeong-Hyo Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/49 ,  H01L27/02

Abstract: A semiconductor device is provided as follows. Active fins protrude from a substrate, extending in a first direction. A first device isolation layer is disposed at a first side of the active fins. A second device isolation layer is disposed at a second side of the active fins. A top surface of the second device isolation layer is higher than a top surface of the first device isolation layer and the second side is opposite to the first side. A normal gate extends across the active fins in a second direction crossing the first direction. A first dummy gate extends across the active fins and the first device isolation layer in the second direction. A second dummy gate extends across the second device isolation layer in the second direction.

公开(公告)号：US11600711B2

公开(公告)日：2023-03-07

申请号：US17329240

申请日：2021-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Myung-Yoon Um ,  Young-Joon Park ,  Jeong-Hyo Lee ,  Ji-Yong Ha ,  Jun-sun Hwang

IPC: H01L29/423 ,  H01L29/78 ,  H01L21/28 ,  H01L29/40 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/49

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

公开(公告)号：US11043568B2

公开(公告)日：2021-06-22

申请号：US16220028

申请日：2018-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Myung-Yoon Um ,  Young-Joon Park ,  Jeong-Hyo Lee ,  Ji-Yong Ha ,  Jun-sun Hwang

IPC: H01L29/423 ,  H01L29/78 ,  H01L21/28 ,  H01L29/40 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/49

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.