公开(公告)号：US11629447B2

公开(公告)日：2023-04-18

申请号：US16999283

申请日：2020-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongkwon Kim ,  Zoohyeong Kim ,  Eungryeol Seo ,  Jihoon Choi

IPC: D06F37/04 ,  D06F23/02 ,  D06F37/22

Abstract: A drum-type washing apparatus includes: a housing including a door in a front thereof to be opened and closed; and a washing tub supported to spin inside the housing, having a cylindrical shape opened toward the door to accommodate laundry therein, and including a pattern on which a plurality of dewatering holes for discharging wash water are arranged on an inner circumferential surface thereof, the pattern including: a first pattern including an even area provided at least one side of a first dewatering hole along the inner circumferential surface, and a second pattern provided at least one side of a second dewatering hole different from the first dewatering hole along the inner circumferential surface and including an uneven area having lower flatness than the even area.

公开(公告)号：USD800976S1

公开(公告)日：2017-10-24

申请号：US29560623

申请日：2016-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Hyunhee Im ,  Jeonghoon Kang ,  Sangyoung Kweon ,  Jihye Lee ,  Jihoon Choi

公开(公告)号：US11788223B2

公开(公告)日：2023-10-17

申请号：US17274366

申请日：2019-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongkwon Kim ,  Youngjin Cho ,  Sangyoung Kweon ,  Jonghun Sung ,  Jihoon Choi

IPC: D06F37/06 ,  D06F39/08

CPC classification number: D06F37/06 ,  D06F39/08

Abstract: A front-loading washing machine includes a housing; a washing tub including one or more locking holes on a lateral side; and one or more lifters lifting up laundry based on spinning of the washing tub. The lifter includes a locking member passing through the locking hole, bent at an outside of the washing tub and extended in a spinning axis direction of the washing tub. The locking hole includes a first edge to which the locking member is locked to couple the lifter and the washing tub, and a second edge and a third edge adjacent to opposite ends of the first edge and surrounding the locking member to face with each other.

公开(公告)号：US11744077B2

公开(公告)日：2023-08-29

申请号：US17173179

申请日：2021-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmin Kang ,  Hanvit Yang ,  Jihoon Choi

IPC: H10B43/27 ,  H10B43/35

CPC classification number: H10B43/35 ,  H10B43/27

Abstract: A mold including insulation layers and sacrificial layers is formed on a substrate. A channel hole is formed through the mold. A first deposition process is performed using a first precursor including silane and a second precursor including silane and a halogen element to form a first preliminary blocking layer on a sidewall of the channel hole. A second deposition process is performed using the first precursor to form a second preliminary blocking layer on the sidewall of the channel hole. The first and second preliminary blocking layers form a third preliminary blocking layer. An oxidation process is performed on the third preliminary blocking layer to transform the third preliminary blocking into a first blocking layer. A charge storage layer, a tunnel insulation layer, and a channel layer are formed on the first blocking layer. The sacrificial layer is replaced with a gate electrode.

公开(公告)号：US20230164999A1

公开(公告)日：2023-05-25

申请号：US17962577

申请日：2022-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangmin Kang ,  Junghwan Kim ,  Hyungjoon Kim ,  Jihoon Choi

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11524 ,  H01L23/528

CPC classification number: H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11524 ,  H01L23/5283

Abstract: A semiconductor device includes gate electrodes on a substrate and a memory channel structure extending through the gate electrodes. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The memory channel structure extends in the vertical direction on the substrate. The memory channel structure includes a first filling pattern extending in the vertical direction, a channel on a sidewall of the first filling pattern, and a charge storage structure on a sidewall of the channel. The first filling pattern includes a material having a thermal conductivity equal to or more than about 100 W/m·K at a temperature of about 25° C.

公开(公告)号：USD801602S1

公开(公告)日：2017-10-31

申请号：US29560611

申请日：2016-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Hyunhee Im ,  Sangyoung Kweon ,  Jihye Lee ,  Jihoon Choi

公开(公告)号：US20210054555A1

公开(公告)日：2021-02-25

申请号：US16999283

申请日：2020-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongkwon Kim ,  Zoohyeong Kim ,  Eungryeol Seo ,  Jihoon Choi

IPC: D06F37/04 ,  D06F37/22 ,  D06F23/02

Abstract: A drum-type washing apparatus includes: a housing including a door in a front thereof to be opened and closed; and a washing tub supported to spin inside the housing, having a cylindrical shape opened toward the door to accommodate laundry therein, and including a pattern on which a plurality of dewatering holes for discharging wash water are arranged on an inner circumferential surface thereof, the pattern including: a first pattern including an even area provided at least one side of a first dewatering hole along the inner circumferential surface, and a second pattern provided at least one side of a second dewatering hole different from the first dewatering hole along the inner circumferential surface and including an uneven area having lower flatness than the even area.

公开(公告)号：US11430800B2

公开(公告)日：2022-08-30

申请号：US16839184

申请日：2020-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunggil Kim ,  Seulye Kim ,  Dongkyum Kim ,  Sungjin Kim ,  Junghwan Kim ,  Chanhyoung Kim ,  Jihoon Choi

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11558

Abstract: A vertical semiconductor device may include a stacked structure, a channel structure and a lower connection structure. The stacked structure may include insulation layers and gate electrodes alternately repeatedly stacked. The stacked structure may be spaced apart from an upper surface of a substrate. The channel structure may include a charge storage structure and a channel. The channel structure may pass through the stacked structure. The lower connection structure may be formed on the substrate. The lower connection structure may be electrically connected with the channel and the substrate. A sidewall of the lower connection structure may include a protrusion disposed at a central portion of the sidewall from the upper surface of the substrate in a vertical direction. The vertical semiconductor device may have a high reliability.

公开(公告)号：US20210384200A1

公开(公告)日：2021-12-09

申请号：US17173179

申请日：2021-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmin Kang ,  Hanvit Yang ,  Jihoon Choi

IPC: H01L27/1157 ,  H01L27/11582

Abstract: A mold including insulation layers and sacrificial layers is formed on a substrate. A channel hole is formed through the mold. A first deposition process is performed using a first precursor including silane and a second precursor including silane and a halogen element to form a first preliminary blocking layer on a sidewall of the channel hole. A second deposition process is performed using the first precursor to form a second preliminary blocking layer on the sidewall of the channel hole. The first and second preliminary blocking layers form a third preliminary blocking layer. An oxidation process is performed on the third preliminary blocking layer to transform the third preliminary blocking into a first blocking layer. A charge storage layer, a tunnel insulation layer, and a channel layer are formed on the first blocking layer. The sacrificial layer is replaced with a gate electrode.