公开(公告)号：US20170256533A1

公开(公告)日：2017-09-07

申请号：US15603969

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hyun YOO ,  Jin-Tae KIM ,  Jong-Sung JEON

IPC: H01L27/02 ,  H01L27/06

CPC classification number: H01L27/0266 ,  H01L27/0248 ,  H01L27/0285 ,  H01L27/0288 ,  H01L27/0629

Abstract: An electrostatic discharge (ESD) protection device includes a substrate including a plurality of fins extending in a first direction, with an insulation layer on the fins. A gate electrode extending in a second direction, an electrode pattern of a capacitor, and a resistor are on the insulation layer. A drain is on a first side of the gate electrode, and a source is on a second side of the gate electrode. A connection structure electrically connects the electrode pattern, the gate electrode and the resistor. The electrode pattern is on the first side or the second side of the gate electrode, and the resistor is on the other of the first side or the second side. At least a portion of the resistor extends in the second direction.

公开(公告)号：US20150102394A1

公开(公告)日：2015-04-16

申请号：US14509365

申请日：2014-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hyun YOO ,  Jin-Tae KIM ,  Jong-Sung JEON

IPC: H01L27/02 ,  H01L27/06

CPC classification number: H01L27/0266 ,  H01L27/0248 ,  H01L27/0285 ,  H01L27/0288 ,  H01L27/0629

Abstract: An electrostatic discharge (ESD) protection device includes a substrate including a plurality of active fins and a plurality of grooves. The ESD protection device includes an insulation layer on the active fins and the grooves, and a gate electrode on the active fins. The ESD protection device includes a first impurity region adjacent to a first side of the gate electrode, and a second impurity region adjacent to a second side of the gate electrode. The second side of the gate electrode may be arranged opposite to the first side. The ESD protection device includes an electrode pattern of a capacitor overlapping the first impurity region, a resistor overlapping the second impurity region, and a connection structure electrically connecting the electrode pattern, the gate electrode, and the resistor to each other.

Abstract translation: 静电放电（ESD）保护装置包括具有多个活动散热片和多个槽的基板。 ESD保护装置包括有源散热片和沟槽上的绝缘层，以及活性散热片上的栅电极。 ESD保护器件包括与栅极电极的第一侧相邻的第一杂质区域和与栅极电极的第二侧相邻的第二杂质区域。 栅电极的第二侧可以布置成与第一侧相对。 ESD保护装置包括与第一杂质区重叠的电容器的电极图案，与第二杂质区域重叠的电阻器以及将电极图案，栅极电极和电阻器彼此电连接的连接结构。

公开(公告)号：US20150205901A1

公开(公告)日：2015-07-23

申请号：US14521928

申请日：2014-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Tae KIM ,  Jae-Woo SEO

IPC: G06F17/50

CPC classification number: G06F17/5072 ,  G06F17/5068

Abstract: According to example embodiments, a layout design system includes a processor, a storage module configured to store a standard cell design, and a generation module. The standard cell design includes an active area and a normal gate area on the active area. The generation module is configured to receive the standard cell design, to adjust a width of an active cut design crossing the active area of the standard cell design, and to output a chip design including a design element using the processor. The design element includes the active cut design having the width adjusted.

Abstract translation: 根据示例实施例，布局设计系统包括处理器，被配置为存储标准单元设计的存储模块和生成模块。 标准电池设计包括有源区域和有源区域上的正常栅极区域。 生成模块被配置为接收标准单元设计，以调整横跨标准单元设计的有效区域的主动切割设计的宽度，并且使用处理器输出包括设计元素的芯片设计。 设计元素包括具有调整宽度的主动切割设计。